Large bandgap of pressurized trilayer graphene

Ke, Feng; Chen, Yabin; Yin, Ketao; Yan, Jiejuan; Zhang, Hengzhong; Liu, Zhenxian; Tse, John S.; Wu, Junqiao; Mao, Ho‐kwang; Chen, Bin

doi:10.1073/pnas.1820890116

Cited by 67 publications

(40 citation statements)

References 57 publications

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“… 13 A remarkable bandgap opening of 2.5 eV has been recently achieved in a semiconducting state of compressed trilayer graphene by tuning the interlayer hybridization. 14 …”

Section: Introductionmentioning

confidence: 99%

Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

et al. 2021

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The pressure dependence of the direct and indirect bandgap transitions of hexagonal boron nitride is investigated using optical reflectance under hydrostatic pressure in an anvil cell with sapphire windows up to 2.5 GPa. Features in the reflectance spectra associated with the absorption at the direct and indirect bandgap transitions are found to downshift with increasing pressure, with pressure coefficients of −26 ± 2 and −36 ± 2 meV GPa –1 , respectively. The GW calculations yield a faster decrease of the direct bandgap with pressure compared to the indirect bandgap. Including the strong excitonic effects through the Bethe–Salpeter equation, the direct excitonic transition is found to have a much lower pressure coefficient than the indirect excitonic transition. This suggests a strong variation of the binding energy of the direct exciton with pressure. The experiments corroborate the theoretical predictions and indicate an enhancement of the indirect nature of the bulk hexagonal boron nitride crystal under hydrostatic pressure.

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“… 13 A remarkable bandgap opening of 2.5 eV has been recently achieved in a semiconducting state of compressed trilayer graphene by tuning the interlayer hybridization. 14 …”

Section: Introductionmentioning

confidence: 99%

Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

et al. 2021

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“…Next, we show that HHG in G/hBN can be greatly enhanced by decreasing the interlayer separation with pressure. Experimentally, the techniques to control interlayer spacing with hydrostatic pressure in hBN-encapsulated graphene heterostructure 53 and trilayer graphene 54 have been demonstrated. High pressure up to hundreds of GPa can be created with the help of the diamond anvil cell (DAC) technique.…”

Section: Pressure-enhanced High Harmonicsmentioning

confidence: 99%

“…55,56 The diamonds can also be utilized as transparent optical windows allowing the laser pumping and transmitted harmonic measurement to be accessible. The sample can be transferred onto the diamond surface of the DAC using a polydimethylsiloxane (PDMS) stamping technique as shown in the experiments by Ke et al 54 The effect of pressure medium intercalation between the graphene and hBN layer should be negligible, since the interlayer spacing between the graphene and hBN layer is extremely small. Fig.…”

Section: Pressure-enhanced High Harmonicsmentioning

confidence: 99%

High harmonic generation in graphene–boron nitride heterostructures

Chen

Qin

2020

J. Mater. Chem. C

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“…In fact, pressure application has been shown to lead in graphene stacks to a combination of mechanical and chemical, e.g. doping, effects [8,9], electronic structure evolution [10] or to structural transformations [11,12].…”

Section: Introductionmentioning

confidence: 99%

Delamination of multilayer graphene stacks from its substrate through wrinkle formation under high pressures

Amaral

Forestier

Piednoir

et al. 2021

Carbon

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There is a need to find new paths for van der Waals 2D-systems detachment and transfer or to control their adhesion state in different environments. We have observed that supported multilayer graphene immersed in a fluid can be detached from a substrate through pressure application. The process is based on the development of wrinkles originated by the difference of in-plane-compressibility between the graphene stacks and the substrate. Graphene stacks comprised between 9 and 110 layers and immersed in various fluids allowed to investigate the growth and evolution of wrinkles with increasing pressure. The detachment from the substrate stops at the pressure-induced fluid solidification. Methanol, ethanol or their mixtures favor the pressure-induced wrinkle formation in SiO 2 /Si substrates. In these cases, the pressure evolution of the delamination process follows a universal behavior independently of the number of graphene layers with a complete delamination at /sim4GPa. The quantitative analysis of the wrinkle geometry evolution can be consistently interpreted as due to a pressure-induced increase of the bending stiffness of the graphene stacks, or a reduction of the adhesion forces between the sample and the substrate, or both. These results should also be of practical use in high-pressure experiments of van der Waals systems.

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Large bandgap of pressurized trilayer graphene

Cited by 67 publications

References 57 publications

Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

High harmonic generation in graphene–boron nitride heterostructures

Delamination of multilayer graphene stacks from its substrate through wrinkle formation under high pressures

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