Large-Area, Transfer-Free, Oxide-Assisted Synthesis of Hexagonal Boron Nitride Films and Their Heterostructures with MoS<sub>2</sub> and WS<sub>2</sub>

Behura, Sanjay K.; Nguyen, Phong; Che, Songwei; Debbarma, Rousan; Berry, Vikas

doi:10.1021/jacs.5b07739

Cited by 121 publications

(108 citation statements)

References 42 publications

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“…Ammonia borane (NH 3 BH 3 ) powder was used as a precursor for hBN growth, and was placed upstream in the CVD tube furnace. During growth, ammonia borane is decomposed at 100 °C to produce gaseous species such as aminoborane, borazine, and hydrogen, which are carried upstream by a flow of H 2 /Ar, and delivered to the Cu foil, kept at 1040 °C (see the Experimental Section). In addition to the use of pristine Cu, we also fabricated reference substrates in which the Cu surface was oxidized by annealing in ambient conditions at 200 °C for 5 min prior to hBN growth .…”

Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Inmentioning

confidence: 99%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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Robust and photostable single photon emitters (SPEs) underpin a number of promising quantum information science and technologies. [1][2][3][4] Solid-state quantum light sources are highly sought after for their ease of integration into onchip architectures, and rapid progress has been made recently with a variety of solidstate sources such as quantum dots, [5,6] color centers in diamond, [7,8] silicon carbide, [9,10] rare-earth materials, [11] carbon nanotubes, [12] and layered van der Waals materials. [3] One of the most promising candidates are quantum emitters in hexagonal boron nitride (hBN), which have recently emerged as a robust solid-state platform capable of hosting bright, [13][14][15][16][17] linearly polarized, [13,18] and optically stable SPEs operating at room temperature with high photon purity. [19,20] While the zerophonon lines (ZPLs) of hBN quantum emitters have been known to display a wide spread of energies (≈1.6-2.4 eV), implying the existence of multiple defect species, [15,18,[21][22][23] recent progress utilizing chemical vapor deposition (CVD) has shown that this spread can be reduced to ≈100 meV. [24,25] This reduced ZPL energy distribution is useful both for applications and for basic studies of the defects responsible for the emissions. However, to fully understand and exploit the diversity of emissions reported in hBN further advances in controlling the observed emission spectra and emitter density are required.In order to target the incorporation of particular structural defects during CVD growth, a method to modify the dominant defect formation processes is required. In situ monitoring of hBN growth on Cu has clarified that hBN growth is subject to complex interaction between the precursor species, and the catalyst surface/bulk. [26] As a result, controlling the interactions between the precursor species and the catalyst is critical to achieve highly crystalline hBN growth, but also offers a promising avenue to controlled defect engineering during CVD growth of hBN. In other material systems such as InAs/ GaAs quantum dots modifying catalyst properties such as lattice mismatch during epitaxial growth has been definitively linked to defect creation. [27] Similarly graphene is known to be dependent of the interactions with the catalyst bulk/surface, where growth depends strongly on the relative phase of the catalyst and the supply of carbon in and out of the catalyst, controlling both defect formation and density. [28,29] Despite added complications for CVD growth of hBN, especially due to Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through ...

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Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Inmentioning

confidence: 99%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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“…Recently, several researchers have reported the chemical vapor deposition (CVD) of h-BN films on various metal substrates including Cu3, Ni4, Fe5, and Pt6 (ammonia borane3 or borazine456 was used as precursor). Also, direct h-BN synthesis via oxygen-assisted CVD on dielectric substrate has reported for eliminating the need for metal catalyst and transfer process7. CVD enables the large-scale synthesis of h-BN films, however, CVD-grown h-BN layers exhibited highly non-uniform properties across the film surface, such as wide thickness and dielectric constant distributions.…”

mentioning

confidence: 99%

Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

Park

Kim

Cho³

et al. 2017

Sci Rep

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Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

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“…This exfoliation/transferring approach, however, is not scalable. An attractive and scalable approach is the direct epitaxial growth of 2D heterostructures, which has recently been shown in several systems using ambient chemical vapour deposition (CVD)9101112131415. Nevertheless, achieving atomic scale control of contamination using ambient CVD is quite challenging.…”

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confidence: 99%

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

et al. 2016

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The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials relaxes the requirement of lattice matching, therefore enabling great design flexibility to tailor novel 2D electronic systems. Here we report the successful growth of MoSe2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using molecular beam epitaxy. Using scanning tunnelling microscopy and spectroscopy, we found that the quasi-particle bandgap of MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru, which causes residual metallic screening from the substrate. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ∼0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

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Large-Area, Transfer-Free, Oxide-Assisted Synthesis of Hexagonal Boron Nitride Films and Their Heterostructures with MoS₂ and WS₂

Cited by 121 publications

References 42 publications

Selective Defect Formation in Hexagonal Boron Nitride

Selective Defect Formation in Hexagonal Boron Nitride

Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

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Large-Area, Transfer-Free, Oxide-Assisted Synthesis of Hexagonal Boron Nitride Films and Their Heterostructures with MoS2 and WS2

Cited by 121 publications

References 42 publications

Selective Defect Formation in Hexagonal Boron Nitride

Selective Defect Formation in Hexagonal Boron Nitride

Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

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Large-Area, Transfer-Free, Oxide-Assisted Synthesis of Hexagonal Boron Nitride Films and Their Heterostructures with MoS₂ and WS₂