Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

Katsouras, Ilias; Frijters, Corné; Poodt, Paul; Kronemeijer, Auke Jisk

doi:10.1002/jsid.783

Cited by 7 publications

(4 citation statements)

References 15 publications

(26 reference statements)

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“…[16,17] This makes sALD well-suited for highly precise, high throughput, and in-line material processing over large areas, e.g., roll-to-roll and sheet-to-sheet sALD. [18][19][20] ALD relies extensively on the underpinning reactive chemistry of precursors. As such the development of new and more reactive precursors is an essential method of improving GPC and overall deposition rate.…”

Section: Introductionmentioning

confidence: 99%

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High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)

Mameli

Parish

Doǧan

et al. 2022

Adv Materials Inter

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interface engineering, in addition to effective doping strategies involving scalable and highly precise processing technology on large areas, have been deemed necessary to advance the development of p-type oxide materials. [5] Atomic layer deposition (ALD) is a layerby-layer thin film deposition method that allows for atomic-level control over thickness and material/interface properties, resulting in conformal and uniform deposition over large areas, and high aspect ratio substrates. [9,10] Such unique features stem from the fact that ALD relies on cyclic and self-limiting chemical reactions between the substrate surface and alternating exposure to a precursor and coreactant. [11] Recently, mobilities of 0.5, 1, and 6 cm 2 V -1 s -1 and on-current/off-current (I On /I Off ) ratios of 10 4 , 10 6 , and 10 2 have been reported for SnO deposited by temporal ALD, using bis(1-dimethylamino-2-methyl-2-butoxy)tin, Sn(dmamb) 2 , bis(1-dimethylamino-2-methyl-2-propoxy)tin Sn(dmamp) 2 , and N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II), [12][13][14] respectively, as the Sn precursor with an H 2 O coreactant. Whilst these results are promising for the development of p-type transistors by ALD, the low deposition rate of temporal ALD, coupled with the low reactivity of current precursor technology may ultimately hinder large area industrial applications. The development of high deposition rate processes (i.e., high growth per cycle (GPC) and/or short cycle time) with atomic-level control, suitable for large-area applications, are therefore of paramount importance. High-throughput ALD can be obtained by improving two major aspects of the process; i) upgrades in deposition hardware (i.e., deposition equipment and methodology), which have the potential to reduce the overall cycle time and or ii) improvement of the underpinning chemistries involved (i.e., the development of novel and chemically optimized precursors) which can increase the GPC, and shorten overall cycle time, thus increasing deposition rate by harnessing higher reactivity with the substrate surface and coreactant.In conventional temporal ALD substrates are exposed to alternate precursor and coreactant doses which are separated in time by extensive purge steps to eliminate precursor mixing and afford self-limited deposition in a cyclic fashion. In contrast to temporal ALD, spatial ALD (sALD) relies on Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA) 2 , and H 2 O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA) 2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sAL...

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Section: Introductionmentioning

confidence: 99%

“…[ 16,17 ] This makes sALD well‐suited for highly precise, high throughput, and in‐line material processing over large areas, e.g., roll‐to‐roll and sheet‐to‐sheet sALD. [ 18–20 ]…”

Section: Introductionmentioning

confidence: 99%

High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)

Mameli

Parish

Doǧan

et al. 2022

Adv Materials Inter

Self Cite

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“…It was found that Ga-ions could hinder the formation of oxygen vacancies, suppressing the generation of free carriers and thus a decrease in field effect mobility with increased Ga-content was observed. 43 Later, Katsouras et al 48 demonstrated the uniform deposition of IGZO on large substrates via the integration of an s-ALD-deposited Al 2 O 3 buffer layer into the TFT stack. The final products showed low off-currents and field effect mobility of 9 cm 2 V −1 s −1 .…”

Section: Recent Applications Of Atmospheric Atomic Layer Depositionmentioning

confidence: 99%

Atmospheric-pressure atomic layer deposition: recent applications and new emerging applications in high-porosity/3D materials

Chen,

Nijboer,

Kovalgin

et al. 2023

Dalton Trans.

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“…To overcome these tradeoffs, atomic layer deposition (ALD) is a powerful vapor-phase deposition process that affords unparalleled control of film thickness and conformality, owing to the self-limiting nature of surface reactions. , The previous literature has shown that by tuning the processing conditions, ALD precursors can infiltrate through ultrafine pores to provide uniform coatings with ultra-high aspect ratios (>50,000:1) and can conformally coat complex topologies with re-entrant texture, without gradients in film thickness or composition. − Furthermore, many ALD processes can be performed at relatively low temperatures (typically <250 °C), which is compatible with a wide range of substrate materials including flexible polymers or biological/organic templates. ,, More recently, advances in spatial ALD processes and instrumentation have increased the throughput of ALD by several orders of magnitude and are compatible with roll-to-roll manufacturing. − These attributes of ALD make it an ideal method to integrate with additive manufacturing processes such as 3D printing as ALD films can conformally modify complex object surfaces with sub-nanometer precision in composition, thickness, and structure. However, the integration of ALD with additive manufacturing remains in its infancy. , …”

Section: Introductionmentioning

confidence: 99%

Integrating Structural Colors with Additive Manufacturing Using Atomic Layer Deposition

Rorem

Cho

Farjam

et al. 2022

ACS Appl. Mater. Interfaces

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We demonstrate tunable structural color patterns that span the visible spectrum using atomic layer deposition (ALD). Asymmetric metal–dielectric–metal structures were sequentially deposited with nickel, zinc oxide, and a thin copper layer to form an optical cavity. The color response was precisely adjusted by tuning the zinc oxide (ZnO) thickness using ALD, which was consistent with model predictions. Owing to the conformal nature of ALD, this allows for uniform and tunable coloration of non-planar three-dimensional (3D) objects, as exemplified by adding color to 3D-printed parts produced by metal additive manufacturing. Proper choice of inorganic layered structures and materials allows the structural color to be stable at elevated temperatures, in contrast to traditional paints. To print multiple colors on a single sample, polymer inhibitors were patterned in a desired geometry using electrohydrodynamic jet (e-jet) printing, followed by area-selective ALD in the unpassivated regions. The ability to achieve 3D color printing, both at the micro- and macroscales, provides a new pathway to tune the optical and aesthetic properties during additive manufacturing.

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Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

Cited by 7 publications

References 15 publications

High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)

High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)

Atmospheric-pressure atomic layer deposition: recent applications and new emerging applications in high-porosity/3D materials

Integrating Structural Colors with Additive Manufacturing Using Atomic Layer Deposition

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