Large area silicon epitaxy using pulsed DC magnetron sputtering deposition

Plantin, Pascale; Challali, Fatiha; Carriot, O.; Lainat, F.; Ancilotti, M.; Gadot, G.; Brault, Pascal

doi:10.1016/j.mee.2007.11.007

Cited by 5 publications

(7 citation statements)

References 6 publications

(8 reference statements)

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“…Therefore, the search for alternative approaches is an important element in developing a road map for effective low‐cost thin film silicon based photovoltaic technology. Most work in this field exploits chemical vapor deposition at high temperatures for inducing crystallization although previous research has shown hydrogen‐free epitaxial growth to be possible for 100 nm thick film by magnetron sputtering of a c‐Si target . It has to be noted, however, that deposition rates for epi‐growth were rather low, 3 nm/min.…”

Section: Introductionmentioning

confidence: 99%

High rate amorphous and crystalline silicon formation by pulsed DC magnetron sputtering deposition for photovoltaics

Bailey

Proudfoot

Mackenzie

et al. 2014

Phys. Status Solidi A

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Two methods of pulsed DC magnetron sputtering deposition have been used to form high rate, hydrogen‐free crystalline silicon layers. The first method is in situ crystalline silicon deposition. The second method is high rate amorphous silicon deposition followed by an anneal to induce crystallization. Over 20 μm thick crystalline silicon can be formed on wafers up to 200 mm round or 156 mm square. Two vacuum deposition systems were used for substrate cleaning and deposition. The crystallinity of silicon layers was analyzed by ellipsometry and Raman spectroscopy. Almost fully crystalline silicon is deposited in situ at table temperatures greater and equal to 650 °C. In situ crystalline silicon has been deposited at 40 nm/min and amorphous silicon can be deposited at over 400 nm/min subject to power density limitations for the silicon target. Up to 20 μm thick amorphous silicon deposited at room temperature is fully crystallized by annealing in vacuum on a 1000 °C table for 2 h. This work demonstrates that sputtering offers significant potential for depositing the absorber layer in silicon based photovoltaics.

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Section: Introductionmentioning

confidence: 99%

High rate amorphous and crystalline silicon formation by pulsed DC magnetron sputtering deposition for photovoltaics

Bailey

Proudfoot

Mackenzie

et al. 2014

Phys. Status Solidi A

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“…below 500 °C [122] (see Figure 12f,g), high-vacuum electron cyclotron resonance plasma deposition epitaxy with temperatures in the range of 450-525 °C, [123] ion beam epitaxy using temperatures of above 300 °C, [124][125][126][127] electron cyclotron resonance plasma CVD (ECR-CVD) using temperatures as low as 285 °C, [128] laser-enhanced chemical vapor deposition at temperatures as low as 250 °C [129] and plasma-enhanced chemical vapor deposition (PECVD) (see Figure 12b,c) using temperatures in the range of 700 °C and down to 150 °C. [44,79,95,109,[130][131][132] It should be emphasized that PECVD is the only technique that has allowed to produce thick c-Si films at low temperatures.…”

Section: "Bottom-up" Approachesmentioning

confidence: 99%

Section: "Bottom-up" Approachesmentioning

confidence: 99%

“…In recent years, many kinds of epitaxial growth techniques have been developed. For example, ultrahigh vacuum low pressure chemical vapor deposition (UHVLPCVD) at high temperatures in the range of 700–960 °C, [ 118–120 ] reduced pressure chemical vapor deposition (RPCVD) at temperatures below 700 °C, [ 100 ] pulsed DC magnetron sputtering deposition [ 121 ] at substrate temperature below 500 °C [ 122 ] (see Figure 12f,g), high‐vacuum electron cyclotron resonance plasma deposition epitaxy with temperatures in the range of 450–525 °C, [ 123 ] ion beam epitaxy using temperatures of above 300 °C, [ 124–127 ] electron cyclotron resonance plasma CVD (ECR‐CVD) using temperatures as low as 285 °C, [ 128 ] laser‐enhanced chemical vapor deposition at temperatures as low as 250 °C [ 129 ] and plasma‐enhanced chemical vapor deposition (PECVD) (see Figure 12b,c) using temperatures in the range of 700 °C and down to 150 °C. [ 44,79,95,109,130–132 ] It should be emphasized that PECVD is the only technique that has allowed to produce thick c‐Si films at low temperatures.…”

Section: “Bottom‐up” Approachesmentioning

confidence: 99%

mentioning

confidence: 99%

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Fabrication of Crystalline Si Thin Films for Photovoltaics

Shen

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells and flexible electronics. However, their application at large scale is limited by their fabrication process. As reviewed in this paper, many approaches have been studied, but only some of them have been made into large‐scale industrial production. The standard wire sawing of Si ingots cannot be scaled down to produce thin c‐Si wafers and films due to the brittle nature of c‐Si material, the resulting significant thickness variations, and the waste of material. Therefore, techniques based on the kerf‐less processes including “top‐down” and “bottom‐up” approaches have been developed in recent decades. In this review, photovoltaic applications of thin c‐Si wafers with thicknesses ranging from 50 μm down to 1 μm are presented first. Then, methods to fabricate c‐Si thin films based on both approaches are detailed, including slim‐cut, “smart‐cut,” epi‐free, as well as various growth processes such as molecular beam epitaxy, liquid phase epitaxy, ion beam, and chemical vapor deposition processes at a wide range of growth temperatures, from 1000 °C down to 150 °C. The advantages and disadvantages of these methods are presented and compared.

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