Large-area semiconductor detectors of beta radiation

Azimov, S. A.; Muminov, R. A.; Baizakov, B. B.; Karpov, V. S.; Radzhapov, S. A.; Khasanov, D.K.; Yafasov, A.Ya.

doi:10.1007/bf01371188

Cited by 5 publications

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“…1, spectra 1 and 2). As shown above, the Si-PI data have significant sizes of local concentrations of impurity atoms, determined by the phase-frequency method [5].…”

Section: Results and Their Discussionmentioning

confidence: 88%

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Gaibov

Vakhobov

Ibragimova

et al. 2022

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The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

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“…1, spectra 1 and 2). As shown above, the Si-PI data have significant sizes of local concentrations of impurity atoms, determined by the phase-frequency method [5].…”

Section: Results and Their Discussionmentioning

confidence: 88%

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Gaibov

Vakhobov

Ibragimova

et al. 2022

MSF

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“…To obtain the specified characteristics of the large size PSDs, such parameters as the temperature, diffusion annealing time, voltage values, and drift conduction method, are important. The diffusion and lithium ion drift modes are selected in accordance with those proposed in [1,2].…”

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confidence: 99%

Development and optimization of the production technology of large-size position-sensitive detectors

et al. 2014

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564Semiconductor nuclear radiation detectors, allow ing one to simultaneously determine the energies and locations of particle impacts have lately become irre placeable in studies of scattering processes on solid tar gets when determining the angular distributions of nuclear particles.Position sensitive detectors (PSDs) are being intensely developed for space, medical, and biological studies and for studies in atomic physics too. They have large advantages over other detectors of similar application, namely, the high energy and position res olutions; signal linearity in a wide energy range for particles of different types; insensitivity to magnetic fields; and stability, small overall dimensions, and arriving data processing simplicity.This work presents the results of our performed development and optimization of the production tech nology of semiconductor nuclear radiation PSDs, based on Si(Li) p-i-n large size X ray detectors for tomographic and ecological problems.The production of such detectors requires preci sion physical processes and conditions. They are spec ified by the fact that low energy X ray beams are applied in these systems for generation of electronhole pairs in the sensitive region of a semiconductor detector. The energy resolution in them should be E g < 200-300 eV, being almost limiting for many detectors based on semiconductor crystals. To meet the require ments for the energy resolution, it is necessary to cre ate physical conditions and mechanisms for ensuring the maximum collections of charge carriers, generated due to X ray quantum energy losses. In this case, these conditions should ensure the same result at any point of the sensitive region of the detector and the detector itself should be position sensitive.To solve these problems, it is required to correlate properties of the initial semiconductor crystal (con ductance, homogeneity, imperfection, etc.) and con ditions for providing high efficient p-n or p-i-n semiconductor structures with large sensitive region volumes and thin input windows ("dead layer") on the frontal side of the structure.The creation of Si(Li) p-i-n structures with a sen sitive region diameter of ~100-120 mm and a thick ness >1.5 mm is a technologically complex problem. In particular, it is necessary to create a sufficiently extended, uniformly lithium compensated sensitive region. To obtain the specified characteristics of the large size PSDs, such parameters as the temperature, diffusion annealing time, voltage values, and drift conduction method, are important. The diffusion and lithium ion drift modes are selected in accordance with those proposed in [1, 2].The lithium diffusion was performed in vacuum to a depth of ~500 µm at the temperature t = 500°C. After the diffusion, steps were etched on the plate to obtain a T shaped form. After etching by the polishing etchant in an HF : HNO 3 : CH 3 COOH (1 : 3 : 1) acid mixture and in the aniline etchant, the initial samples had reverse currents I ≤ 10 µA. Then, the lithium ion drift was carried out in samples on...

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Salient features of the fabrication of Si(Li) detectors with a large-volume working region

et al. 2005

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Semiconductor detectors with a large working volume are needed to solve certain paroblems in nuclear spectroscopy. The development of such detectors became possible with advances in growing large-diameter silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with a large working volume is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector.However, even though the mobility of lithium ions in silicon is anomalously high, a long time is required for diffisuin-drift compensation of lithium in a large volume (W ≥ 2 mm, S ≈ 20 -80 cm 2 ). In addition, the usual method of compensation, which includes drift of lithium ions from a distributed source, produced from one end of the crystal by preliminary diffusion of lithium, does not give a uniform drift front beause of the nonuniformity of the temperature field in a large-volume crystal. The diffusion region can also become very diffuse during prolonged drift, which will result in very thick entry and exit windows and will decrease the effectiveness of the spectromeric characteristics of the detector.A new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of a large volume of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. The method consists of the following. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. Figure 1a shows the typical diffusion profile obtained for the distribution of the lithium concentration by the proposed method in p-Si with ρ = 10 Ω·cm and N 0 ≈ 2·10 17 cm -3 . The negligible deviation of the lithium penetration depth at the two opposite end surfaces of the crystal is due to the fact that lithium did not enter simultaneously at both ends.Before the drift voltage is applied, the crystal is shaped in the form shown schematically in Fig. 1b. After the standard required technical operations have been performed, the crystals are placed into a setup where lithium ions drift into the volume of the crystal, as shown in Fig. 2a. The drift regime was chosen taking account of the low resistance of the initial silicon [1]. It is easy to show that in the proposed method the compensation time for a prescribed volume of a p-Si crystal is decreased by a factor of 4. Indeed, according to the empirical formula for the dependence of the depth of the compensation region for the case of unilateral drift where µ is the mobility of lithium ions and U and t 1 are the drift voltage and drift time, respectively.For bilateral drift, the path traversed by the lithium ions is two times shorter, i.e., Hence for the compensation time for bilateral drift and t 2 = 1/4t 1 . t t 1 2 2 / = W U t i / . 2 2 2...

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Large-area semiconductor detectors of beta radiation

Cited by 5 publications

References 1 publication

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Development and optimization of the production technology of large-size position-sensitive detectors

Salient features of the fabrication of Si(Li) detectors with a large-volume working region

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