Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Darakchieva, Vanya; Boosalis, A.; Zakharov, Alexei; Hofmann, Tino; Schubert, M.; Tiwald, Thomas E.; Iakimov, Tihomir; Vasiliauskas, Remigijus; Yakimova, Rositsa

doi:10.1063/1.4808379

Cited by 29 publications

(28 citation statements)

References 32 publications

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“…It is known as the buffer layer or zero-layer graphene [25,40,89,[92][93][94]. This reconstructed surface loses its distinct graphene electronic properties because of sp 3 hybridization of about 30% of the carbon atoms which are covalently bonded with the Si atoms of the SiC interface (left inset in Figure 15) [40,95,96]. Because of this strong coupling with the substrate, a buffer layer does not show graphene-like π bands and is electronically inactive [97].…”

Section: Growth Of Graphene On Si Facementioning

confidence: 99%

“…Our results also indicate that there exists a range of optimal terrace width which should be kept in order to maintain formation of one monolayer graphene and to avoid the increase of carrier concentration [73]. The relationships between surface reconstruction, graphene layer thickness, and electronic properties of epitaxial graphene grown on both polar faces of 3C-SiC were studied by using large-area µ-SE mapping ( Figure 41) and LEEM/µ-LEED investigations [95]. Large homogeneous ML graphene domains with sizes up to "2ˆ2 mm 2 on the Si face are observed, while on the C face, domains with homogeneous thickness are significantly smaller.…”

Section: Epitaxial Graphene On 3c-sic and Comparison With Other Polytmentioning

confidence: 99%

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Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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Section: Growth Of Graphene On Si Facementioning

confidence: 99%

Section: Epitaxial Graphene On 3c-sic and Comparison With Other Polytmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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“…Such control has been widely achieved for graphene grown on the Si face of SiC, where single-crystalline, homogeneous, and continuous monolayers can cover entire areas from the micro-to the milliscale [1][2][3][4]. On the other hand, even under similar growth conditions, graphitization over the C face of SiC is still challenging.…”

Section: Introductionmentioning

confidence: 99%

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

et al. 2015

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Interface disorder probed at the atomic scale for graphene grown on the C face of SiC, 2015, Physical Review B. Condensed Matter and Materials Physics, (91) We use aberration-corrected scanning transmission electron microscopy, electron energy-loss spectroscopy, atomic force microscopy, and the density functional theory to study the structural and electronic characteristics of graphene grown on the C face of SiC. We show that for high growth temperatures the graphene/SiC (0001) interface is dominated by a thin amorphous film which strongly suppresses the epitaxy of graphene on the SiC substrate. This film maintains an almost fixed thickness regardless of the number of the overlying graphene layers, while its chemical signature shows the presence of C, Si, and O. Structurally, the amorphous area is inhomogeneous, as its Si concentration gradually decreases while approaching the first graphene layer, which is purely sp 2 hybridized. Ab initio calculations show that the evaporation process and the creation of Si vacancies on the C face of SiC strongly enhance the surface disorder and designate defect areas as preferential sublimation sites. Based on these features, we discuss differences and similarities between the C-only buffer layer that forms on the Si face of SiC and the thicker C-Si-O amorphous film of the C face.

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“…Most of the works employing either 3C-SiC substrates or 3C-SiC templates on Si(111) for the growth of graphene focused on Si-face material. [8][9][10][11][12] Only two works on C-face graphene grown on 3C-SiC(111) by low-10 and high-temperature 11 sublimation in a ultra-high vacuum and an argon atmosphere, respectively, have been published. Both studies reported that C-face graphene grows without the formation of a buffer layer in similarity to the situation for FLG on 4H-and 6H-SiC.…”

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confidence: 99%

“…The regions with uniform thickness in our sample are considerably larger, of the order of few microns, compared to C-face graphene on 3C-SiC reported previously. 11 A representative LEEM image taken from an area consisting predominantly of 4ML regions is shown in Fig. 4(a).…”

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Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Bouhafs

Stanishev

Zakharov

et al. 2016

Applied Physics Letters

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We show experimentally that few layer graphene (FLG) grown on the carbon terminated surface (C-face) of 3C-SiC(111) is composed of decoupled graphene sheets. Landau level spectroscopy on FLG graphene is performed using the infrared optical Hall effect. We find that Landau level transitions in the FLG exhibit polarization preserving selection rules and the transition energies obey a square-root dependence on the magnetic field strength. These results show that FLG on C-face 3C-SiC(111) behave effectively as a single layer graphene with linearly dispersing bands (Dirac cones) at the graphene K point. We estimate from the Landau level spectroscopy an upper limit of the Fermi energy of about 60 meV in the FLG, which corresponds to a carrier density below 2.5 × 1011 cm−2. Low-energy electron diffraction μ-LEED) reveals the presence of azimuthally rotated graphene domains with a typical size of ≤200 nm. μ-LEED mapping suggests that the azimuth rotation occurs between adjacent domains within the same sheet rather than vertically in the stack.

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Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Cited by 29 publications

References 32 publications

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

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