Large‐Area Graphene and Carbon Nanosheets for Organic Electronics: Synthesis and Growth Mechanism

Bandgap modification in graphene has received immense attention in the quest to develop postsilicon electronic materials. Hydrogenation of graphene has largely been the focus of bandgap modification; however, current research has relied solely upon the appearance of structural defects in Raman spectroscopy to evaluate the extent of hydrogenation. Here, the authors present time-of-flight secondary ion mass spectrometry (ToF-SIMS) as a complementary tool to Raman in determining the chemical changes occurring concurrently with structural defects. Multivariate analysis, through the use of principal component analysis (PCA) is coupled to ToF-SIMS analysis for the rapid determination of differences in surface chemistry between samples. Untreated graphene was found to exhibit a minimal defect intensity in the Raman with the most prominent ion intensities in the ToF-SIMS originating from unsaturated, graphene-like carbon fragments. However, exposure to H2 plasma results in the evolution of a structural defect in the Raman which coincides with a mass shift toward ions representing hydrogen-rich, saturated hydrocarbons in addition to aliphatic oxides. The use of PCA on the resultant ion images and spectra allowed for rapid differentiation between samples based upon chemical species, rather than the intensity of a lattice defect alone, with high intra- and intersample reproducibility.

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Beyond defect formation: Spectroscopic characterization of plasma-induced structural and electronic transformations in graphene

Wallace

Quinn

Gardella

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Recent research suggests plasma-induced hydrogenation is an efficient method for inducing a band-gap in graphene. To date, the characterization of plasma treatment-induced chemical changes is performed almost exclusively by Raman spectroscopy with the extent of hydrogenation presented as the evolution defect structures in the sp2 lattice of graphene. Alarmingly, almost no attention is given to the concurrent electronic modification. Here, x-ray induced Auger emission spectroscopy is utilized to better understand the effect of plasma treatment on the electronic properties of graphene beyond the formation of defects as determined by Raman spectroscopy. The results indicate the fine structure of the CKLL emission offers a suitable complement to Raman spectroscopy in assessing the extent of chemical and electronic changes induced by H2 plasma treatments. Significant changes to the D-value, defined as the distance between local maxima and minima in the CKLL Auger emission, are observed after only 30 s of treatment (p < 0.001), while the ID/IG ratio remains statistically equivalent (p = 0.441). The results indicate significant differences in the electronic properties of plasma-treated graphene are observed concomitant to sp2 defect structures normally attributed to hydrogenation.

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Large‐Area Graphene and Carbon Nanosheets for Organic Electronics: Synthesis and Growth Mechanism

Cited by 3 publications

References 160 publications

Continuous synthesis of well-crystalline VACNTs using CVD method for engineering applications

Continuous synthesis of well-crystalline VACNTs using CVD method for engineering applications

Time-of-flight secondary ion mass spectrometry as a tool for evaluating the plasma-induced hydrogenation of graphene

Beyond defect formation: Spectroscopic characterization of plasma-induced structural and electronic transformations in graphene

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