Large-area few-layer MoS<sub>2</sub>deposited by sputtering

Huang, Jyun Hong; Chen, Hsing Hung; Liu, Po–Tsun; Lu, Li Syuan; Wu, Chien Ting; Chou, Cheng Tung; Lee, Yao Jen; Li, Lain‐Jong; Chang, Wen‐Hao; Hou, Tuo Hung

doi:10.1088/2053-1591/3/6/065007

Cited by 39 publications

(25 citation statements)

References 35 publications

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“…E fb is identical for both the electrodes, which indicates that the MoS 2 does not impact the conduction type of Sb 2 Se 3 , and also suggests that MoS 2 decoration protects the Sb 2 Se 3 photocathode and the band bending is unaffected by it. Here, the CSS‐deposited pristine Sb 2 Se 3 and MoS 2 /Sb 2 Se 3 NR arrays have a higher E fb value than that reported for the thermally evaporated Sb 2 Se 3 film (e.g., 0.55 V) . The acceptor densities (see Supporting Information) estimated for pristine Sb 2 Se 3 and MoS 2 /Sb 2 Se 3 are ≈

2.0 \times 10^{16}

and

5.6 \times 10^{16}

cm −3 , respectively.…”

Section: Resultsmentioning

confidence: 60%

“…The acceptor densities (see Supporting Information) estimated for pristine Sb 2 Se 3 and MoS 2 /Sb 2 Se 3 are ≈

2.0 \times 10^{16}

and

5.6 \times 10^{16}

cm −3 , respectively. These values are one order of degree larger than that of the thermally evaporated Sb 2 Se 3 (e.g.,

1.14 \times 10^{15}

cm −3 ) . The improved E fb is associated with the enhanced heterojunction quality and increased doping density with the sputtered MoS 2 layer.…”

Section: Resultsmentioning

confidence: 88%

“…However, the solution‐processed MoS x catalyst faces various issues, including thickness uniformity, composition dependence of the synthetic procedure, and scalability . In contrast, the physical vapor deposition (PVD) techniques such as sputtering offer a better way to synthesize stable, uniform, and large‐area MoS 2 thin films with great control . However, minimal efforts have been made to synthesize the large‐scale MoS 2 heterostructures by PVD techniques and use them for photocatalysis applications.…”

Section: Introductionmentioning

confidence: 99%

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Scalable Core–Shell MoS₂/Sb₂Se₃ Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Guo

Shinde

et al. 2019

Solar RRL

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Photoelectrochemical (PEC) hydrogen generation is a promising solar energy harvesting technique to address the concerns about the ongoing energy crisis. Antimony selenide (Sb2Se3) with van der Waals‐bonded quasi‐1D (Q1D) nanoribbons, for instance, (Sb4Se6)n, has attracted considerable interest as a light absorber with Earth‐abundant elements, suitable bandgap, and a desired sunlight absorption coefficient. By tuning its anisotropic growth behavior, it is possible to achieve Sb2Se3 films with nanostructured morphologies that can improve the light absorption and photogenerated charge carrier separation, eventually boosting the PEC water‐splitting performance. Herein, high‐quality Sb2Se3 films with nanorod (NR) array surface morphologies are synthesized by a low‐cost, high‐yield, and scalable close‐spaced sublimation technique. By sputtering a nonprecious and scalable crystalline molybdenum sulfide (MoS2) film as a cocatalyst and a protective layer on Sb2Se3 NR arrays, the fabricated core–shell structured MoS2/Sb2Se3 NR PEC devices can achieve a photocurrent density as high as −10 mA cm−2 at 0 VRHE in a buffered near‐neutral solution (pH 6.5) under a standard simulated air mass 1.5 solar illumination. The scalable manufacturing of nanostructured MoS2/Sb2Se3 NR array thin‐film photocathode electrodes for efficient PEC water splitting to generate solar fuel is demonstrated.

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2.0 \times 10^{16}

and

5.6 \times 10^{16}

cm −3 , respectively.…”

Section: Resultsmentioning

confidence: 60%

“…The acceptor densities (see Supporting Information) estimated for pristine Sb 2 Se 3 and MoS 2 /Sb 2 Se 3 are ≈

2.0 \times 10^{16}

and

5.6 \times 10^{16}

cm −3 , respectively. These values are one order of degree larger than that of the thermally evaporated Sb 2 Se 3 (e.g.,

1.14 \times 10^{15}

cm −3 ) . The improved E fb is associated with the enhanced heterojunction quality and increased doping density with the sputtered MoS 2 layer.…”

Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Scalable Core–Shell MoS₂/Sb₂Se₃ Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Guo

Shinde

et al. 2019

Solar RRL

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“…Sputtering, as a method using ions to bombard the TMDCs target, is able to create a vapor of the TMDCs material at low temperature and then, deposit on the substrate. Huang et al 108 reported an area‐scalable, thickness‐controllable, and high‐quality 2D MoS 2 synthesis method by using direct current (DC) sputtering of a MoS 2 target followed by postdeposited annealing. MoS 2 was deposited at 400°C using an Ar flow of 20 sccm, a working pressure of 10 mTorr, DC power of 50 W, and a stable sputtering rate of 0.1 nm s −1 , and then annealed in the atmosphere of S at 1000°C.…”

Section: Preparation Of Tmdcsmentioning

confidence: 99%

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Xiao

Zeng

et al. 2020

InfoMat

109

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Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D) transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade. However, to fulfill the demands for practical applications, the batch production of 2D TMDCs with high quality and large area at the mild conditions is still a challenge. This feature article reviews the state‐of‐the‐art research progresses that focus on the preparation and the applications in electronics and optoelectronics of 2D TMDCs and their van der Waals heterojunctions. First, the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined. Then, recent progress on the application of fabricated 2D TMDCs‐based materials is revealed with particular attention to electronic (eg, field effect transistors and logic circuits) and optoelectronic (eg, photodetectors, photovoltaics, and light emitting diodes) devices. Finally, the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

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“…However, poor reproducibility and uniformity of exfoliated MoS 2 flakes significantly limit their practical applications. In this regard, massive efforts to grow large-area and high-crystalline MoS 2 films have been devoted, and a feasibility of diverse growth methods has been demonstrated, including chemical vapor deposition (CVD) 33,34 , atomic layer deposition (ALD) 35,36 , and physical vapor deposition (PVD) 37,38 . Nonetheless, the poor reliability and reproducibility of CVD owing to the unstable gas flow dynamic in the chamber as well as high-cost and low throughput of ALD reduce the availability of rather efficient and scalable growth techniques.…”

mentioning

confidence: 99%

Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

et al. 2020

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Highly sensitive and system integrable gas sensors play a significant role in industry and daily life, and MoS2 has emerged as one of the most promising two-dimensional nanomaterials for gas sensor technology. In this study, we demonstrate a scalable and monolithically integrated active-matrix gas sensor array based on large-area bilayer MoS2 films synthesized via two-successive steps: radio-frequency magnetron sputtering and thermal sulfurization. The fabricated thin-film transistors exhibit consistent electrical performance over a few centimeters area and resulting gas sensors detect NO2 with ultra-high sensitivity across a wide detection range, from 1 to 256 ppm. This is due to the abundant grain boundaries of the sputtered MoS2 channel, which perform as active sites for absorption of NO2 gas molecules. The demonstrated active-matrix gas sensor arrays display good switching capabilities and are anticipated to be readily integrated with additional circuitry for different gas sensing and monitoring applications.

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Large-area few-layer MoS₂deposited by sputtering

Cited by 39 publications

References 35 publications

Scalable Core–Shell MoS₂/Sb₂Se₃ Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Scalable Core–Shell MoS₂/Sb₂Se₃ Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

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Large-area few-layer MoS2deposited by sputtering

Cited by 39 publications

References 35 publications

Scalable Core–Shell MoS2/Sb2Se3 Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Scalable Core–Shell MoS2/Sb2Se3 Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

Contact Info

Product

Resources

About

Large-area few-layer MoS₂deposited by sputtering

Scalable Core–Shell MoS₂/Sb₂Se₃ Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting

Scalable Core–Shell MoS₂/Sb₂Se₃ Nanorod Array Photocathodes for Enhanced Photoelectrochemical Water Splitting