Large area electron beam physical vapor deposition (EB-PVD) and plasma activated electron beam (EB) evaporation — Status and prospects

Reinhold, E.; Faber, J.

doi:10.1016/j.surfcoat.2011.09.022

Cited by 12 publications

(4 citation statements)

References 6 publications

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“…At present, the following four methods make it possible to deposit oxide coatings with a very high deposition rate, and they are the subject of intensive development: (1) gas flow sputtering (159)(160)(161)(162)(163)(164)(165)(166), (2) high-power pulsed magnetron sputtering (HPPMS) (167)(168)(169)(170)(171)(172)(173), (3) ionized evaporation (174)(175)(176)(177)(178)(179)(180)(181)(182)(183), and (4) magnetron sputtering from a molten target (184)(185)(186)(187)(188)(189)(190)(191)(192)(193). The principles of these methods are schematically shown in Figure 31.…”

Section: Very-high-rate Deposition Of Hard Oxide Coatingsmentioning

confidence: 99%

Hard Nanocomposite Coatings

Musil

Zeman

Baroch

2014

Comprehensive Materials Processing

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Section: Very-high-rate Deposition Of Hard Oxide Coatingsmentioning

confidence: 99%

Hard Nanocomposite Coatings

Musil

Zeman

Baroch

2014

Comprehensive Materials Processing

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“…All electron beam (EB) heated sources rely on energy transfer from incident electrons to thermally evaporate any one of a large variety of solid targets. The modern electron gun (EG or E-gun) that was introduced in the early 1960s, remaining virtually unchanged since then, has found application in metallization on semiconductors, optics [22] and in industrial processes like the deposition of corrosion protective coatings on strip metal [35]. A detailed description of the EBD source and the power supplies that control it [22] will not be repeated herein, however a brief description will follow to describe the source used for this investigation.…”

Section: Introductionmentioning

confidence: 99%

The Origin of Defects Induced in Ultra-Pure Germanium by Electron Beam Deposition

et al. 2015

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The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but there is still much that needs to be clarified. Experiments using Ge and Si were performed that demonstrate that energetic particles, the products of collisions in the electron beam, were responsible for the majority of electron-beam deposition (EBD) induced defects in a two-step energy transfer process. Lowering the number of collisions of these energetic particles with the semiconductor during metal deposition was accomplished using a combination of static shields and superior vacuum resulting in devices with defect concentrations lower than 10 11 cm −3 , the measurement limit of our deep level transient spectroscopy (DLTS) system. High energy electrons and photons that samples are typically exposed to were not influenced by the shields as most of these particles originate at the metal target thus eliminating these particles as possible damage causing agents. It remains unclear how packets of energy that can sometimes be as small of 2 eV travel up to a µm into the material while still retaining enough energy, that is, in the order of 1 eV, to cause changes in the crystal. The manipulation of this defect causing phenomenon may hold the key to developing defect free material for future applications.

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“…This method has demonstrated as an industrial deposition process for titanium and its compounds with rates up to 2000 nm/s. Moreover, a novel dual crucible technology was further investigated to improve the long-term stability of SAD [8]. This newly developed process is based on two evaporating electrodes.…”

Section: Introductionmentioning

confidence: 99%