Abstract:This chapter reviews amorphous silicon devices for large area flat panel imaging technology. We present Schottky and p-i-n diode image sensors and elaborate on their operating principles, electrical and optoelectronic characteristics including stability, along with the challenges associated with reduction of the dark current. Issues pertinent to sensor-thin film transistor integration for different active matrix pixel architectures for high fill factor imaging arrays are presented along with optimization of ma… Show more
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