Large-area and bright pulsed electroluminescence in monolayer semiconductors

Lien, Der‐Hsien; Amani, Matin; Desai, Sunil R.; Ahn, Geun Ho; Han, Kevin; He, Jr‐Hau; Ager, Joel W.; Wu, M.C.; Javey, Ali

doi:10.1038/s41467-018-03218-8

Cited by 156 publications

(249 citation statements)

References 30 publications

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“…The EL quantum yield at room temperature is typically ~1% for both lateral and vertical device geometries [37,112,113,115], which is of the same order of magnitude as the PL quantum yield at the equivalent excitation rate. The quantum yield currently is limited by non-radiative recombination and is expected to increase as higher quality samples become available.…”

Section: Electrically Driven Excitonic Light Emission Electroluminesmentioning

confidence: 95%

“…The same device structure allowed for the observation of interlayer exciton EL in a MoSe2/WSe2 heterobilayer [110]. Alternatively, electron-hole pairs can be injected in an ambipolar field-effect transistor using an ionicliquid gate [111] or in a transient operation-mode by applying an AC voltage between the gate and the semiconductor [112]. Vertical VdW heterostructure light emitters, consisting of graphene electrodes, hBN tunnel barriers and a TMD monolayer semiconductor (Fig.…”

Section: Electrically Driven Excitonic Light Emission Electroluminesmentioning

confidence: 99%

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Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

2018

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Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2 and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially interesting candidates for various applications in optics and optoelectronics. Here, we review their optical and optoelectronic properties with emphasis on exciton physics and devices. As excitons are tightly bound in these materials and dominate the optical response even at room-temperature, their properties are examined in depth in the first part of this article.We discuss the remarkably versatile excitonic landscape, including bright, dark, localized and interlayer excitons. In the second part, we provide an overview on the progress in optoelectronic device applications, such as electrically driven light emitters, photovoltaic solar cells, photodetectors and opto-valleytronic devices, again bearing in mind the prominent role of excitonic effects. We conclude with a brief discussion on challenges that remain to be addressed to exploit the full potential of transition metal dichalcogenide semiconductors in possible exciton-based applications.

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Section: Electrically Driven Excitonic Light Emission Electroluminesmentioning

confidence: 95%

Section: Electrically Driven Excitonic Light Emission Electroluminesmentioning

confidence: 99%

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

2018

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“…As shown, the contribution to EL intensity from either spin-up or spin-down valley can be modulated by changing the current-flow direction resulting in circularly polarized light output. Another interesting way to realize an EL signal through ML TMDCs is by transient switching as shown in figure 8(d) [135]. The device schematic ( figure 8(d) (i)) and a map of normalized EL counts for varying biasing condition ( figure 8(d) (ii)) is shown for WSe 2 as an example.…”

Section: Light Emitting Devicesmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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“…Electroluminescence (EL) from 2D transition metal dichalcogenides (TMDs) was observed shortly after monolayers from this class of materials were first isolated 5,6,7,8,9 . In monolayer TMD crystals, the formation of a direct bandgap allows for reasonable light-emission efficiencies to be achieved.…”

mentioning

confidence: 99%

Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes

et al. 2020

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The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 µm, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells 1 , InSb/AlInSb 2 , GaInAsSbP pentanary alloys 3 , and intersubband transitions in group III-V compounds 4 . These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS 2 ) heterojunction emits polarized light at l = 3.68 μm with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1% and ~3×10 -2 %, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission.Electroluminescence (EL) from 2D transition metal dichalcogenides (TMDs) was observed shortly after monolayers from this class of materials were first isolated 5,6,7,8,9 . In monolayer TMD crystals, the formation of a direct bandgap allows for reasonable light-emission efficiencies to be achieved. The high degree of confinement in monolayers also ensures a large exciton binding

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Large-area and bright pulsed electroluminescence in monolayer semiconductors

Cited by 156 publications

References 30 publications

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

Optoelectronic and photonic devices based on transition metal dichalcogenides

Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes

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