2018
DOI: 10.1038/s41467-018-07208-8
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Large-area and adaptable electrospun silicon-based thermoelectric nanomaterials with high energy conversion efficiencies

Abstract: Large amounts of waste heat generated in our fossil-fuel based economy can be converted into useful electric power by using thermoelectric generators. However, the low-efficiency, scarcity, high-cost and poor production scalability of conventional thermoelectric materials are hindering their mass deployment. Nanoengineering has proven to be an excellent approach for enhancing thermoelectric properties of abundant and cheap materials such as silicon. Nevertheless, the implementation of these nanostructures is s… Show more

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Cited by 69 publications
(54 citation statements)
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References 43 publications
(50 reference statements)
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“…These results are in a good position when comparing with similarly doped Si bottom-up NWs [43] and Si thin [20,55], possibly because of the low contact resistance and the high surface roughness of the present NWs, compared to smoother structures [44]. While other works reported more complex Si nanomaterials with higher doping and higher / (nano-bulk from [50,56] and nano-holes from [20,57]), to our knowledge, the present one is the first to report on the characterization of a nanomaterial which can be directly grown and integrated within MEMS using mature and scalable techniques. Other structures with remarkable performance also obtained by MEMScompatible procedures, like holey membranes, lack from a straightforward fabrication technique that allows to obtain them in suspended platforms [20], as is the case of the bottom-up NW arrays obtained in the present and related works [14][15][16][17]25,33].…”
Section: / Ratiosupporting
confidence: 63%
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“…These results are in a good position when comparing with similarly doped Si bottom-up NWs [43] and Si thin [20,55], possibly because of the low contact resistance and the high surface roughness of the present NWs, compared to smoother structures [44]. While other works reported more complex Si nanomaterials with higher doping and higher / (nano-bulk from [50,56] and nano-holes from [20,57]), to our knowledge, the present one is the first to report on the characterization of a nanomaterial which can be directly grown and integrated within MEMS using mature and scalable techniques. Other structures with remarkable performance also obtained by MEMScompatible procedures, like holey membranes, lack from a straightforward fabrication technique that allows to obtain them in suspended platforms [20], as is the case of the bottom-up NW arrays obtained in the present and related works [14][15][16][17]25,33].…”
Section: / Ratiosupporting
confidence: 63%
“…Other structures with remarkable performance also obtained by MEMScompatible procedures, like holey membranes, lack from a straightforward fabrication technique that allows to obtain them in suspended platforms [20], as is the case of the bottom-up NW arrays obtained in the present and related works [14][15][16][17]25,33]. References from other works reporting ZT vs T values for bulk (solid line [3]) and nanostructures (dashed lines [50,56]) are included. The labels indicate the first author and the doping level in that work, in units of 10 19 B atoms/cm 3 .…”
Section: / Ratiomentioning
confidence: 86%
“…a) The electrospun carbon nanofiber, b) poly‐silicon layer on the carbon nanofiber, c) silicon oxide nanotube after annealing of the carbon nanofiber, d) poly‐silicon layer coating the silicon oxide nanotube. Scale bars are 200 nm . Reproduced with permission from Ref .…”
Section: Design and Fabrication Of T‐tegsmentioning
confidence: 99%
“…[41] Unlike commonly used coating methods, Morata et al presented an industrially scalable manufacturing method for fabrication of large-area and cost-effective TE fabrics. [51] A case of TE fabric made up of p-type silicon nanotubes was fabricated by depositing silicon layers onto sacrificial substrates of electrospun carbon nanofibers. In a typical procedure, carbon nanofiber fabric was obtained from annealing as-electrospun PAN fabric ( Figure 4a).…”
Section: D T-tegsmentioning
confidence: 99%
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