“…These include (i) vapor‐grown ultrapure pentacene single crystal devices with field‐effect mobilities of 15–40 cm 2 V −1 s −1 ; (ii) vapor‐grown rubrene single crystal based OFETs with a mobility of 18 cm 2 V −1 s −1 , which utilized a chemically‐treated dielectric surface to reduce the charge trap density; (iii) a vacuum‐gap field‐effect transistor with a hole mobility of about 10 cm 2 V −1 s −1 by using platelet‐like, thin dinaphtho[2,3‐ b :2′,3′‐f]thieno[3,2‐ b ]thiophene (DNTT) single crystals grown by horizontal physical vapor transport in; and (iv) epitaxy‐grown, two‐dimensional C 8 ‐BTBT crystal‐based OFETs with a mobility of 10 cm 2 V −1 s −1 . Often, the vapor‐based growth process is combined with the template‐assisted approach to control the growth, alignment, and positioning of organic single crystals . Organic single crystals including pentacene, rubrene, tetracene, C 60 , F 16 CuPc, and tetracyanoquinodimethane (TCNQ), have been directly grown on octadecyltriethoxysilane (OTS)‐printed domains (Figure d) .…”