Large anisotropy in the magnetodielectric effect of orthorhombic HoMnO<sub>3</sub>thin films

Lee, S. H.; Jung, Myung‐Hwa; Yang, Chengyan; Koo, Tae‐Yeong; Jeong, Y. H.

doi:10.1088/1742-6596/200/1/012103

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…4 and 5 for the two field directions and temperatures below and above 16 K, respectively. 27 For clarity a relative dielectric permittivity is shown that is defined as (H ) = (H ) − (0) and (H ) = (H ) − (0). As for the magnetization the field direction has a significant influence on the magnetoelectric effect.…”

Section: Magnetoelectric Effectmentioning

confidence: 99%

Angular dependence of the magnetoelectric effect in orthorhombic HoMnO3films

et al. 2011

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Epitaxial orthorhombic HoMnO 3 films were grown on Nb-doped SrTiO 3 (001) single-crystal substrates. X-ray diffractometry showed a uniform crystallographic orientation with the c axis along the substrate normal and an anisotropic compressive stress along the b axis of the Pbnm structure. The magnetization of the films was dominated by the paramagnetism of the Ho 3+ ions; the latter showed a strong anisotropy with respect to the in-plane and perpendicular-to-plane magnetic field direction. The rotational anisotropy of the magnetoelectric effect was measured for magnetic field rotation in the (110) o , (110) o , and (001) o planes. Whereas magnetic field rotation in the (110) o and (110) o planes showed a twofold pattern with the smallest magnetoelectric effect observed in magnetic fields along the c axis, in-plane (001) o magnetic field rotations revealed an intricate rotational symmetry. A magnetic-field-induced crossover was observed from a low-field region with fourfold rotation patterns to a high-field region with rotation patterns up to the 12th order. This complex rotational symmetry arises from spin-orbit coupling of the Ho 3+ moments that induces a modulation of the magnetoconductance as well as a magnetoelectric effect through the Maxwell-Wagner mechanism.

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Section: Magnetoelectric Effectmentioning

confidence: 99%

Angular dependence of the magnetoelectric effect in orthorhombic HoMnO3films

et al. 2011

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“…In addition, the difference between the formation energies of the orthorhombic and the hexagonal RMnO 3 phases could be small, so it might be possible to prepare the orthorhombic phase from the hexagonal phase through epitaxial thin-film growth, such as orthorhombic HoMnO 3 thin film. [18][19][20][21] However, due to contributions from both Mn 3þ and magnetic Ho 3þ , the low-temperature magnetic property and the origin of ferroelectric polarization in orthorhombic HoMnO 3 bulk/thin film become more complex. Since Sc 3þ in ScMnO 3 has no localized magnetic moment, the lowtemperature magnetic property becomes relatively simple.…”

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confidence: 99%

“…In all reported orthorhombic HoMnO 3 and LuMnO 3 films, irrespective of crystal axis direction, the antiferromagnetic ordering temperature is around 40 K and is extremely resistant to lattice strain. [18][19][20][21] Whether the second magnetic transition (or spin reorientation transition of Mn 3þ ) shows up or not and in which crystal direction it appears depend on many factors such as film growth orientation, lattice strain, or R ion size. For example, when (101) orientation orthorhombic HoMnO 3 film grown on Nb-doped SrTiO 3 (111) substrates, 21 no second magnetic transition of Mn 3þ is observed, while in the c-axis orientation orthorhombic HoMnO 3 film grown on Nb-doped SrTiO 3 (001), 18 a second magnetic transition shows up.…”

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confidence: 99%

Abnormal magnetic ordering and ferromagnetism in perovskite ScMnO3 film

Wang

Zhang

Liu

et al. 2015

Applied Physics Letters

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Bulk multiferroic ScMnO3 is the stable hexagonal phase, and it is very difficult to prepare its perovskite orthorhombic phase even under high pressure. We fabricated the orthorhombic ScMnO3 thin film by pulsed laser deposition through suitable substrate LaAlO3 and found that nano-scale twin-like domains are naturally formed in the thin film. Magnetic properties of the orthorhombic ScMnO3 thin films show that, besides normal antiferromagnetic ordering at 47 K, an anomalous magnetic transition occurs at 27 K for 60 nm film and at 36 K for 150 nm film only along the c-axis, which is absent in the ab-plane. Moreover, the second magnetic transition for both films is suppressed when the applied field increases from 1 kOe to 10 kOe. In addition, the ferromagnetism shows up in both films at 10 K, and saturation magnetization increases dramatically in 60 nm film compared with 150 nm film. We propose that the second magnetic transition might be more of lattice strain effect and also related to magnetism-induced ferroelectric polarization in orthorhombic RMnO3 thin films and low-temperature ferromagnetic properties in our films originate from the nano-scale twin-like domain structure.

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