DOI: 10.53846/goediss-2860
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Lanthanide Doped Wide Band Gap Semiconductors: Intra-4f Luminescence and Lattice Location Studies

Abstract: Luminescence properties, along with lattice locations of lanthanide implanted into wide band gap semiconductors, are presented in this work. This study focuses on semiconductors with the widest currently known band gap among their group. These are represented by aluminum nitride and cubic boron nitride for the group of III-V nitride semiconductors, as well as diamond and 6H-silicon carbide for the group of carbide semiconductors. The method of choice for doping at this stage is ion implantation, preferably wit… Show more

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