Langmuir probe measurements in expanding magnetized argon, nitrogen and hydrogen plasmas

Brussaard, G.; Steen, Marieke van der; Carrère, M.; Sanden, M.C.M. van de; Schram, D.C.

doi:10.1016/s0257-8972(97)00251-x

Cited by 8 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In general the built-up of charge due to the current of positive charge carriers during the ramp is exactly balanced by the current of negative charge carriers during the pulse. In case of an Ar-H 2 plasma the dominant positive ion is H 3 + ions 23 and during the pulse free electrons are the dominant charge carriers. In both cases the current is a function of the density of the charge carrier, its respective mobility and the potential difference between plasma and substrate.…”

Section: A Psb Analysismentioning

confidence: 99%

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Wank

Swaaij

Kudlacek

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ∼200 °C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for deposition on conductive substrates and for deposition of conductive materials on nonconductive substrates. Presence of negative ions/particles in the Ar–H2–SiH4 plasma is deduced from a voltage offset during biasing. Densification of the material at low Urbach energies is observed at a deposited energy <4.8 eV/Si atom and attributed to an increase in surface mobility of mobile species as well as well as surface atom displacement. The subsequent increase in Urbach energy >4.8 eV/Si atom is attributed to bulk atom displacement in subsurface layers. We make the unique experimental abservation of a decreasing Tauc band gap at increasing total hydrogen concentration—this allows to directly relate the band gap of amorphous silicon to the presence of nanovoids in the material.

show abstract

Section: A Psb Analysismentioning

confidence: 99%

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Wank

Swaaij

Kudlacek

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…However, it should be noted that both our experiments and theoretical simulation have a certain degree of uncertainty. For instance, the measured ion density can be off by several tens of percent 26,27 and the secondary electron yield is only an assumed value and in fact changes with the sample voltage ͑for example, continuously during the voltage rise time͒. Nonetheless, the dynamic sheath model can yield some insight on the process and is quite powerful when combined with experimental verification.…”

Section: Resultsmentioning

confidence: 99%

Influence of thickness and dielectric properties on implantation efficacy in plasma immersion ion implantation of insulators

Chu

Xia

2004

Journal of Applied Physics

View full text Add to dashboard Cite

Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc techniqueEffects of mesh-assisted carbon plasma immersion ion implantation on the surface properties of insulating silicon carbide ceramics Plasma immersion ion implantation of insulators is an interesting topic both theoretically and industrially. The net energy of the incident ions is dictated by the surface potential and for conductors is equal to the voltage applied to the backside or sample stage. However, the poor electrical conductivity of insulating materials can lead not only to charging during ion bombardment but also reduced surface potential due to the capacitance effect. In the work described in this paper, we theoretically and experimentally investigate the influence of the thickness and dielectric properties of insulating materials on the implantation efficacy. The use of mesh-assisted PIII by covering the insulating materials with an electrically conducting cage to enhance the implantation efficacy is also compared experimentally. Our theoretical results suggest that a low plasma density induces less surface charges and higher surface potential. Our experimental data show good agreement with the theoretical results and mesh-assisted PIII does yield net improvement.

show abstract

Process structure properties relationship during formation of CrN and AlN layers on H13 Steel

Rojo

Oseguera

Salas

et al. 2008

Surface and Coatings Technology

View full text Add to dashboard Cite

Langmuir probe measurements in expanding magnetized argon, nitrogen and hydrogen plasmas

Cited by 8 publications

References 4 publications

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Influence of thickness and dielectric properties on implantation efficacy in plasma immersion ion implantation of insulators

Process structure properties relationship during formation of CrN and AlN layers on H13 Steel

Contact Info

Product

Resources

About