Landau level electron scattering and lifetimes in n-GaAs and n-InP

Saturation spectroscopy of hot carriers in coupled double quantum well structures

“…In principle, by measuring the intensity dependence of the resonance absorption the relaxation rate (and thus the lifetime) ofcarriers in the excited states can be extracted. Far-inkared (FIR) magnetoimpurity absorption saturation in bulk GaAs [l] and absorption saturation of Landau levels (LL) in both bulk GaAs [2,3] and GaAs/AlGaAs single heterostructures [4,5] have been reported with relatively low-intensity excitation ( 6 1 W cm-'). Recently, optical saturation of intersubband absorption in GaAs/AlGaAs quantum wells was achieved with much stronger excitation (-1 MW cm-z) at 10-12 pm [SI. Compared with the visible to near-rrc regions of the spectrum, saturation spectroscopy in the FIR region is relatively unexplored due to the scarcity of powerful light sources.…”

Electronically tunable laser with automatic alignment along the Bragg angle in an acoustooptic deflector

“…In principle, by measuring the intensity dependence of the resonance absorption the relaxation rate (and thus the lifetime) ofcarriers in the excited states can be extracted. Far-inkared (FIR) magnetoimpurity absorption saturation in bulk GaAs [l] and absorption saturation of Landau levels (LL) in both bulk GaAs [2,3] and GaAs/AlGaAs single heterostructures [4,5] have been reported with relatively low-intensity excitation ( 6 1 W cm-'). Recently, optical saturation of intersubband absorption in GaAs/AlGaAs quantum wells was achieved with much stronger excitation (-1 MW cm-z) at 10-12 pm [SI.…”