Landau-Level-Electron Lifetimes in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-InSb

Gornik, E.; Chang, T. Y.; Bridges, Thomas J.; Nguyen, V.T.; McGee, J.D.; Müller, Wolfgang

doi:10.1103/physrevlett.40.1151

Cited by 55 publications

(18 citation statements)

References 13 publications

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“…Several investigations of nonlinear optical phenomena including the saturation of cyclotron resonance and impurity transitions in semiconductors [1, 2,3], two photon absorption [4], and second harmonic generation [5] have been performed, using TEA laserpumped systems. In a previous paper we reported on cw FIR nonlinear magnetoabsorption of Is-2p+ shallow donor transitions in high purity epitaxial n-GaAs [6].…”

Section: Introductionmentioning

confidence: 99%

Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

Prettl

Vass

Allan

et al. 1983

Int J Infrared Milli Waves

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The saturation of the photoconductivity due to Is-2p+ shallow donor transitions in n-GaAs has been investigated using a high power cw-FIR-laser. Magnetic field strengths were chosen in such a way that 2p+ energy levels were either below or above the N = O conduction band Landau level. In the former case Is-2p+ transitions are found to be inhomogeneously broadened with a saturation intensity as low as 0.84 mW/cm 2, giving an effective lifetime of the 2p+ state of 1.5 ~s. Above the band edge the integrated photoconduetivity does not saturate though the intensity-normalized peak photosignal decreases and the linewidth increases with raising intensity. This strange behaviour is tentatively attributed to optical excitations of 2p+ electrons to higher lying electron Landau states.Key word:semiconductors, epitaxial GaAs, shallow donors, nonlinear photoconductivity, power broadening.

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Section: Introductionmentioning

confidence: 99%

Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

Prettl

Vass

Allan

et al. 1983

Int J Infrared Milli Waves

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“…The electronelectron part of the sequential process has been shown to be the slowest ͑i.e., dominating͒ leg from the observation of an n dependence of the lifetime. 17,20 We show here a combination of pump-probe and saturation measurements of the cyclotron resonance in an InAs/ AlSb quantum well. This narrow gap material (E g ϭ0.42 eV in InAs͒ has sufficient band nonparabolicity so that higher Landau levels are bent out of resonance ͑see Fig.…”

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confidence: 99%

Suppression of LO phonon scattering in Landau quantized quantum dots

et al. 1999

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Picosecond time-resolved far-infrared measurements are presented of the scattering between conductionband states in a doped quasi quantum dot. These states are created by the application of a magnetic field along the growth direction of an InAs/AlSb quantum well. A clear suppression of the cooling rate is seen, from 10 12 s Ϫ1 when the level spacing is equal to the phonon energy, to 10 10 s Ϫ1 away from this resonance, and thus the results provide unambiguous evidence for the phonon bottleneck. Furthermore, the lifetimes had only weak dependence on temperature between 4 and 80 K. ͓S0163-1829͑99͒50612-7͔Electronic lifetimes of two-dimensional ͑2D͒ systems in magnetic fields are of fundamental interest in part because the quantization effect of the magnetic field mimics the effect of a quantum dot potential with an easily variable degree of confinement. 1 The magnetic field perpendicular to the layers forces the electrons into confined orbits and the density of states becomes a ladder of broadened ␦ functions similar to that of a quantum dot. Recently much work has been carried out on the so-called ''phonon bottleneck'' that has been claimed to inhibit the cooling of carriers in quantum dots when the level separation is not equal to the phonon energy. [2][3][4][5][6] However, partly as a result of different groups using different growth techniques for interband photoluminescence samples and partly on fundamental grounds, this is controversial and is the subject of much debate. 7-12 Indeed several mechanisms have been proposed that may bypass the bottleneck, such as multiphonon scattering, 7 Auger processes, 8 excitonic effects, 9 and defect related processes. 10 In the present work we observe clear phonon suppression in n-type quasi 0D dots ͑i.e., Landau quantized rather than spatially quantized͒ by a time-resolved intraband absorption measurement. This provides unambiguous evidence for the phonon bottleneck effect independently of arguments concerning which processes dominate in the interband photoluminescence measurements in dots 3-6,9-12 and quasi dots 13 such as electron-hole scattering. Further, because of the very clean model system ͑much sharper interfaces and no wetting layer, etc.͒, the interpretation is not complicated by detailed questions about different growth techniques and the quality of different dot sample structures. The results should assist in the understanding of which aspect of these processes is fundamental and which is dependent on sample structure.Resonant absorption of longitudinal optic ͑LO͒ phonons causes a variety of transport properties to oscillate with applied magnetic field, such as the magnetoresistance. 14 Resonant phonon scattering occurs whenwhere ប LO is the LO phonon energy, ប c ϭបeB/m* is the cyclotron energy, and ⌬l is an integer. At these resonances the LO phonon absorption/emission probability is strongly enhanced giving rise to large changes in the electron energy relaxation lifetime. 15,16 In the present work we have used the pump-probe technique, with cyclotron resonan...

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“…Electron-electron scattering responsible for transitions between LL in bulk n-InSb was observed in Ref. 5.…”

Section: Introductionmentioning

confidence: 94%

Auger scattering between Landau levels in a two-dimensional electron gas

Tsitsishvili

Levinson

1997

Phys. Rev. B

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We calculate the scattering rate of a test electron, due to the Auger process between Landau levels, for two-dimensional electrons in a random potential. The random potential is assumed to be smooth, and its correlation length is large compared to the magnetic length. Two Auger processes were considered. The first one is the Auger process in which two photoelectrons in the same Landau level are scattered, deexciting one to a lower level, losing energy, and exciting the second to a higher level, gaining energy. The second Auger process is the inverse one. In that case a photoelectron from an upper level and a thermal electron from a lower level are scattered, and both are transferred to the same intermediate level. It is shown that the scattering rate is largest for those Auger transitions in which the change in the Landau-level number is equal to 1. The dependence of the scattering rate on the test electron energy and the magnetic field are discussed. As an example, the Auger process in which the interacting electrons are in the second Landau level is considered. Numerical results of the dependence of the Auger scattering rate on the test electron energy and the magnetic field for this case are presented. Simplified formulas for the scattering rate are also suggested.

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Landau-Level-Electron Lifetimes inn-InSb

Cited by 55 publications

References 13 publications

Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

Suppression of LO phonon scattering in Landau quantized quantum dots

Auger scattering between Landau levels in a two-dimensional electron gas

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