1998
DOI: 10.1016/s0921-4526(98)00520-1
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Landau and spin levels in InAs quantum wells resolved with in-plane and parallel magnetic fields

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Cited by 8 publications
(8 citation statements)
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“…The magnitude of the g-factor in our quantum wells can be determined by temperature dependent measurements or via experiments where the magnetic field in tilted with respect to the sample surface. We find in both cases values for the g-factor of |g| ≈ 12 − 15 [22]. This makes InAs-AlSb quantum wells promising candidates for spin-related experiments.…”
mentioning
confidence: 66%
“…The magnitude of the g-factor in our quantum wells can be determined by temperature dependent measurements or via experiments where the magnetic field in tilted with respect to the sample surface. We find in both cases values for the g-factor of |g| ≈ 12 − 15 [22]. This makes InAs-AlSb quantum wells promising candidates for spin-related experiments.…”
mentioning
confidence: 66%
“…This interplay between pronounced even-and odd-integer filling factor minima occurs for a series of angles. It also shows up in the respective quantum Hall plateaus [9].…”
Section: Level Crossing In the Single Particle Regimementioning
confidence: 86%
“…The analysis in terms of a picture of non-interacting electrons has proven very powerful for the analysis of energy spectra in Si-MOSFETs [3], InAs-GaSb superlattices [4], InAs-GaSb quantum wells [5], GaAs-AlGaAs heterostructures [6], GaInAs/InP heterostructures [7] and Si/SiGe heterostructures [8]. In this paper we focus on InAs-AlSb quantum wells and extend preliminary studies on this material system [9]. We present several features that are perfectly well explained in the existing single-particle picture, namely 1. the appearance and disappearance of even-and odd-integer SdH minima as a function of tilt angle, 2. a Zeman splitting as large as five times the Landau splitting for tilt angles around 87 • , and 3. a g-factor for InAs of about 13 in agreement with considerations based on conduction band non-parabolicity [10].…”
Section: Introductionmentioning
confidence: 87%
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“…Refs. 51, 52 and references therein), InAs quanutm wells 53 , graphene 54 , polar ZnO/Mg x Zn 1−x O interfaces 55 . In all of these systems, edge excitations can interact strongly and could be in an E 8 phase at ν = 8 or the D + 12 phase or the E 8 ⊕ I 4 phase at ν = 12.…”
Section: Discussionmentioning
confidence: 99%