Lambertian matched absorption enhancement in PECVD poly‐Si thin film on aluminum induced textured glass superstrates for solar cell applications

Abstract

This paper examines the effectiveness of a range of aluminum induced textured (AIT) glass topographies at enhancing light absorption in silicon thin film diode structures deposited on the textured glass side, operating in the superstrate configuration. The aluminum layer used to produce the AIT can be deposited either by thermal evaporation or magnetron sputtering. Varying AIT process parameters produces a wide range of feature roughness and uniformity, providing scope to optimize texture effectiveness and process repeatability. We report strong correlation between the degree of absorption enhancement from these textures and both dark field microscope images of the AIT glass and reduction of the interference envelope in spectral reflectance of the deposited silicon films. Our findings corroborate earlier modeling work based on ray tracing, which predicted that the best enhancement occurs when the feature size is close to the film thickness. In this paper we investigate AIT samples in the 1 -3 mm film thickness range, some of which trap light in silicon as strongly as at the Lambertian limit.

Crystalline silicon growth in the aluminium-induced glass texturing process

“…Excellent optical absorption enhancement for AIT glass has recently been reported [8]. Furthermore, it is shown in Ref.…”

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

“…What's more, light deflected at certain angles can be confined in the solar cell by total internal reflection at the surface, causing it to make multiple passes of the absorber layer before escape. Scattering mechanisms include roughened surfaces [42], geometrically textured surfaces [43], diffraction gratings [44] and metal or dielectric nanoparticles [45].…”

Evaluation of Solar Cell Properties of Poly-Si Thin Film Fabricated with Novel Process Conditions for Solid Phase Crystallization

“…등을 이용하여 증착한다 [8,9]. 화학기상 증착법의 증 착 속도는 약 200 nm/min로 전자빔 증발법 (1,000 nm/min)에 비하여 느리지만 양질의 실리콘 박막을 증착하는 데는 유리하다.…”

“…화학기상 증착법의 증 착 속도는 약 200 nm/min로 전자빔 증발법 (1,000 nm/min)에 비하여 느리지만 양질의 실리콘 박막을 증착하는 데는 유리하다. 따라서 일반적으로 비정질 실리콘 박막의 증착에는 화학기상 증착법을 이용한다 [6,8].…”