Lamb wave transducers built on periodically poled Z-cut LiNbO3 wafers

Courjon, E.; Courjal, Nadège; Daniau, W.; Lengaigne, G.; Gauthier-Manuel, Ludovic; Ballandras, S.; Hauden, J.

doi:10.1063/1.2802566

Cited by 33 publications

(41 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This shear response of domain walls is also potentially of significant applied interest. In fact, a finite-element analysis of the behavior of a piezoelectric transducer based on ferroelectric domain structures in PZT 20,21 suggests that such a lateral response, whose origin at that time remained unaddressed, could result in the generation of surface acoustic waves in the device. 22 Having considered the d 35 DW response in materials with a purely out-of-plane polarization, we next addressed its effects on PFM measurements in BFO thin films deposited on ͑001͒ SrTiO 3 , which present a monoclinically distorted tetragonal structure with polarization lying close to the ͗111͘ directions.…”

mentioning

confidence: 99%

Shear effects in lateral piezoresponse force microscopy at 180° ferroelectric domain walls

Guyonnet

Béa

Guy³

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

In studies using piezoresponse force microscopy, we observe a nonzero lateral piezoresponse at 180°d omain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb͑Zr 0.2 Ti 0.8 ͒O 3 epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the d 33 piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO 3 films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization and has to be taken into account in order to correctly interpret the ferroelectric domain configuration. © 2009 American Institute of Physics. ͓doi:10.1063/1.3226654͔ Ferroelectric materials, characterized by their reversible spontaneous electric polarization, show great potential for multifunctional applications ranging from nonvolatile memories 1,2 to nanoscale sensors and actuators. 3 Controlling the structure and stability of ferroelectric domains in these materials is a key requirement for device implementation. In particular, the dynamics of domain walls, the interfaces separating regions with differently oriented ferroelectric polarization in the films, can significantly affect performance. 4 Understanding domain wall behavior at the nanoscopic scales of current and future devices, however, requires techniques with the requisite nanoscale resolution.One such technique is piezoresponse force microscopy ͑PFM͒, 5 in which a metallic atomic force microscope ͑AFM͒ tip is used to apply an alternating voltage across the ferroelectric material, resulting in a local mechanical response at the film surface due to the inverse piezoelectric effect. This piezoelectric response can be detected from the induced displacement of the AFM cantilever, recorded by the position of a laser beam reflected onto a quadrant-split photodetector. The vertical deflection and angular torsion of the tip are referred to as vertical and lateral PFM, respectively. The response phase provides information on the polarization, while its amplitude is related to the polarization magnitude. 6 Depending on the piezoelectric coefficient tensor d ij , linked to the crystal symmetry, a combination of these two measurements allows access to both out-of-plane and in-plane components of polarization. Although quantitative measurements of piezoelectric coefficients via PFM are challenging, the technique has provided valuable information about the behavior of domain walls and switching dynamics both in thin films 7,8 and in device structures. [9][10][11] In this context, understanding the origins of the PFM signal observed at ferroelectric domain walls is an important issue.Considering only piezoelectric effects, in a c-axis-oriented tetragonal ferroelectric film with an electric field applied along the polarization axis, the piezoelectric response is determined by the d 33 coefficient, leading to a purely vertical PFM signal. However, in such films, a nonzero lateral PFM response has been ...

show abstract

mentioning

confidence: 99%

Shear effects in lateral piezoresponse force microscopy at 180° ferroelectric domain walls

Guyonnet

Béa

Guy³

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The FEM simulation method presented here is general, and may be applied to other domain structures in piezoelectric and ferroelectric materials. The understanding of lateral PFM signals presented here could be useful in the design of shear mode transducers and sensors based on periodic ferroelectric domains with 180° walls [56][57][58] .…”

Section: Discussionmentioning

confidence: 99%

Origin of piezoelectric response under a biased scanning probe microscopy tip across a 180∘ferroelectric domain wall

et al. 2012

View full text Add to dashboard Cite

PACS number(s): 77.80.Fm, 77.22.Ej The piezoelectric response of a material under a nanoscale biased tip scanned across a sample in piezoelectric force microscopy (PFM) provides insight into the structure and dynamics of domain walls in ferroelectrics. While the vertical displacements of the tip under piezoelectric deformations of the sample has been reasonably explained, the origin of the lateral twisting of the tip remains unclear.

show abstract

“…The so-called periodically poled transducer (PPT) is actually taking advantage of a planar definition of the acoustic period (similarly to SAW) and a bulk propagation, allowing for various kinds of mode and acoustic propagation to be exploited. It consists of a periodic polarization of ferroelectric materials such as single crystal LiNbO 3 , combined with plane electrodes exciting and detecting waves propagating in the bulk of the material [3], providing an alternative to IDT's exhibiting remarkable properties. As shown in [3], assuming a given grating period, the frequency of a PPT is twice higher than the one of IDT, as PPTs do naturally operate on a second harmonic regime, as explained in fig.…”

Section: Introductionmentioning

confidence: 99%

Highly coupled resonator based on ridge-shaped periodically poled materials for radio-Frequency applications

Henrot

Bassignot

Guyot

et al. 2013

2013 Joint European Frequency and Time Forum &Amp; International Frequency Control Symposium (EFTF/IFC)

View full text Add to dashboard Cite

Surface Acoustic Wave (SAW) and Bulk Acoustic Wave (BAW) devices are largely used in telecommunication for radio Frequency (RF) signal processing. Nevertheless, these devices are limited by various factors such as short-circuit between electrodes for SAW and precise thickness control for BAW. This paper shows the interest of a new kind of transducer using Periodically Poled Lithium Niobate (PPLN) developed to overcome SAW and BAW technological limits. A former PPLNbased wave-guide was presented some years ago exploiting planar technologies. The novelty of the present work lies in the 3D structuring of the transducer allowing for very high aspect ratio structures exhibiting a theoretical electromechanical coupling about 20% and a phase velocity up to 20 km.s -1 .

show abstract

Lamb wave transducers built on periodically poled Z-cut LiNbO3 wafers

Cited by 33 publications

References 9 publications

Shear effects in lateral piezoresponse force microscopy at 180° ferroelectric domain walls

Shear effects in lateral piezoresponse force microscopy at 180° ferroelectric domain walls

Origin of piezoelectric response under a biased scanning probe microscopy tip across a 180∘ferroelectric domain wall

Highly coupled resonator based on ridge-shaped periodically poled materials for radio-Frequency applications

Contact Info

Product

Resources

About