Laboratory study of potential induced degradation of silicon photovoltaic modules

Schütze, M.; Junghänel, M.; Koentopp, Max; Cwikla, S.; Friedrich, S.; Müller, Jörg; Wawer, P.

doi:10.1109/pvsc.2011.6186080

Cited by 101 publications

(88 citation statements)

References 5 publications

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“…A partially conductive water layer transports charge, to an extent, to the grounded module frame. Alternatively, the glass may be grounded with use of a metal (e.g., Al, Cu) foil pressed onto it [19]. There is also motivation for using the foil method in a standardized test due to the convenience of not requiring humidity generation in precise concentrations or for grounding the entirety of the module face; so the relationship with the stress used in the interlaboratory study should be clarified.…”

Section: Comparison Of Damp-heat Methods With Full-face Grounding Amentioning

confidence: 99%

Interlaboratory Study to Determine Repeatability of the Damp-Heat Test Method for Potential-Induced Degradation and Polarization in Crystalline Silicon Photovoltaic Modules

Hacke

Terwilliger

Glick

et al. 2015

IEEE J. Photovoltaics

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Abstract-To test reproducibility of a technical specification under development for potential-induced degradation (PID) and polarization, three crystalline silicon module types were distributed in five replicas each to five laboratories. Stress tests were performed in environmental chambers at 60°C, 85% relative humidity, 96 h, and with module nameplate system voltage applied. Results from the modules tested indicate that the test protocol can discern susceptibility to PID according to the pass/fail criteria with acceptable consistency from lab to lab; however, areas for improvement are indicated to achieve better uniformity in temperature and humidity on the module surfaces. In the analysis of variance of the results, 6% of the variance was attributed to laboratory influence, 34% to module design, and 60% to variability in test results within a given design. Testing with the additional factor of illumination with ultraviolet light slowed or arrested the degradation. Testing at 25°C with aluminum foil as the module ground was also examined for comparison. The foil, as tested, did not itself achieve consistent contact to ground at all surfaces; but methods to ensure more consistent grounding were found and proposed. The rates of degradation in each test are compared and details affecting the rates are discussed.

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Section: Comparison Of Damp-heat Methods With Full-face Grounding Amentioning

confidence: 99%

Interlaboratory Study to Determine Repeatability of the Damp-Heat Test Method for Potential-Induced Degradation and Polarization in Crystalline Silicon Photovoltaic Modules

Hacke

Terwilliger

Glick

et al. 2015

IEEE J. Photovoltaics

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show abstract

“…PID is distinctly different from aged deterioration and could lead to a significant power loss in the system. [1][2][3][4][5][6][7][8] It has been proposed that Na ions arising from the front cover glass of the PV modules drift through the encapsulant by the electric field due to the electric potential difference between the cell and the grounded Al frame, and also diffuse inside of the cell. Such Na ion migration is a possible origin of PID for p-type crystalline Si PV modules.…”

Section: Introductionmentioning

confidence: 99%

“…4,[9][10][11][12][13][14][15] As a consequence, the stacking faults in the cell are decorated by Na impurities. It is known that this Na migration results in the significant shunting of the cell and degrades its efficiency, [1][2][3][4][5]7,[16][17][18][19][20] and shunting is the most common feature of PID in standard p-type crystalline Si PV modules. It has been also reported that Na also forms deep impurity levels inducing carrier recombination.…”

Section: Introductionmentioning

confidence: 99%

Effect of bias voltage application on potential-induced degradation for crystalline silicon photovoltaic modules

Jonai

Tanahashi

Shibata

et al. 2018

Jpn. J. Appl. Phys.

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To analyze the dynamic behavior of Na ions in the p-n junction of crystalline Si photovoltaic (PV) cells during potential-induced degradation (PID), a bias voltage was applied between the electrodes of the testing PV modules. During the PID test with a negative high voltage stress (HVS), PID was suppressed by the simultaneous loading of a forward bias voltage, although that of a reverse bias voltage accelerated the progression of PID. However, in the recovery stage after the PID test, the opposite loading effects of the bias voltage with a positive HVS were found. In other words, the extent of recovery from PID was suppressed or enhanced by forward or reverse bias loading, respectively. Similar effects of bias loading were observed even under the recovery conditions without the positive HVS. The effect of Na ions within a depletion layer on the evolution of PID will be discussed for the interpretation of these results.

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“…We do not discuss the initial degradation and yearly degradation rates of performance in this paper. The degradation of front contact characteristics, which leads to an increase in series resistance, [11][12][13][14] and potentialinduced degradation (PID), which leads to a decrease in shunt resistance, [15][16][17] significantly affect the module lifetime. In this paper, some aspects of mechanism analyses of these degradation modes are described and the comparative experimental test results of the samples fabricated using conventional technology or our technology are also described.…”

Section: Introductionmentioning

confidence: 99%

Development of highly efficient, long-term reliable crystalline silicon solar cells and modules by low-cost mass production

Irie¹,

Tanabe²,

Atobe³

et al. 2018

Jpn. J. Appl. Phys.

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To reduce photovoltaic (PV) power generation costs, the reduction of PV module manufacturing costs, the improvement of cell and module efficiencies, and the long-term output power warranty of PV modules are necessary. Using the high-quality, low-cost crystal growth technology, we developed a high-quality casting process by the seed-cast method. Using a seed-cast wafer, an efficiency of 20.54% has been obtained with passivated emitter and rear cells (PERCs). The ohmic contact degradation of front electrodes and potential-induced degradation are the typical modes that significantly affect the module lifetime. Considering the field stresses induced by ultraviolet light, heat and humidity (H&H), and the electrical potential difference, sequentially combined stress tests of small modules and additional stress tests of field-aged modules are performed. The test results for the modules fabricated using our technology indicated that the modules have a sufficiently long lifetime of more than 30 years and are potential-induced degradation (PID)-free under these stresses in Japanese domestic environments.

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Laboratory study of potential induced degradation of silicon photovoltaic modules

Cited by 101 publications

References 5 publications

Interlaboratory Study to Determine Repeatability of the Damp-Heat Test Method for Potential-Induced Degradation and Polarization in Crystalline Silicon Photovoltaic Modules

Interlaboratory Study to Determine Repeatability of the Damp-Heat Test Method for Potential-Induced Degradation and Polarization in Crystalline Silicon Photovoltaic Modules

Effect of bias voltage application on potential-induced degradation for crystalline silicon photovoltaic modules

Development of highly efficient, long-term reliable crystalline silicon solar cells and modules by low-cost mass production

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