Laboratory outlines for embryology

Harman, Mary T.

doi:10.5962/bhl.title.22004

Cited by 23 publications

(30 citation statements)

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“…This conclusion follows from a comparison between the observed free carrier concentrations along the PbTe phase diagram. The maximum of the liquidus in this diagram is shifted from the stoichiometric composition toward the tellurium-rich side [7]. It follows then that in melt grown PbTe crystals, a strong Te concentration gradient along the ingot must be present.…”

Section: Discussionmentioning

confidence: 85%

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The Effect of Gadolinium Doping on the Physical Properties of Lead Telluride

Zayachuk

Ivanchuk

et al. 1990

phys. stat. sol. (a)

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The behaviour of Gd impurity in Bridgeman grown lead telluride crystals and the effect of Gd on the electrical properties and magnetic susceptibility of Gd doped crystals are studied. Gd is shown to behave like a donor impurity, although not in the usual sense of the word, and can cause PbTe crystals to become paramagnetic. Electronic conduction of Gd doped crystals is explained as resulting from a change in the relation between point defect concentration in the metal subsystem and that in the Te subsystem in favour of the latter. The Gd distribution along ingots can be accounted for only by assuming that the Gd segregation coefficient increases as the melt becomes Gd depleted.

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Section: Discussionmentioning

confidence: 85%

“…Free carrier concentration (I), 77 K magnetic susceptibility(2), 293 K magnetic susceptibiiity (3), and the calculated Gd concentration (4) along ingot No 7. …”

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confidence: 99%

The Effect of Gadolinium Doping on the Physical Properties of Lead Telluride

Zayachuk

Ivanchuk

et al. 1990

phys. stat. sol. (a)

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“…The Sn composition for which the band inversion should occur varies from xϳ0.35 to xϳ0.65 as the temperature increases from 4 to 300 K. However, it is very difficult to determine the band edge structure near and beyond the band inversion region, since only high carrier concentration samples can be obtained. 9 The energy gap of Pb 1Ϫx Sn x Te has been experimentally determined only for x Ͻ0.25. The Burstein-Moss shift, caused by the high hole concentration, which is observed in the samples with higher tin composition, imposes difficulties in the determination of the ''real'' gap by optical-absorption measurements.…”

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confidence: 99%

Experimental observation of band inversion in the PbSnTe system

Ferreira

Abramof

Motisuke

et al. 1999

Journal of Applied Physics

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The band inversion in the PbSnTe compound has been observed by optical and electrical measurements. The samples, high quality Pb 1Ϫx Sn x Te epitaxial layers, have been grown by molecular-beam epitaxy on ͑111͒BaF 2 substrates. Optical transmission measurements have revealed a change in signal of the energy gap temperature derivative for samples with 0.35ϽxϽ0.70. In the same samples and at the same temperature, a minimum in the resistivity has been observed, showing a interrelation between the optical and electrical measurements. However, the temperature, for which the inversion occurs, is not that predicted by the band inversion model. This discrepancy is supposed to be due to the relatively high hole concentration of these samples.

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“…The Seebeck coefficient α was determined by the thermoelectromotive force induced by a temperature difference in the range from 0 K to 2 K 9 . The temperature dependence of the Seebeck coefficient was measured using samples to which a temperature difference from 0 K to 550 K was applied 10 . The resistivity ρ and the Hall coefficient R H were measured by the DC four-terminal method 9 .…”

Section: Methodsmentioning

confidence: 99%

Thermoelectric Properties of Na-doped Mg2Si0.25Sn0.75

Tada

Isoda

Udono

et al. 2013

Trans. Mat. Res. Soc. Japan

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We have investigated the thermoelectric properties of Na-doped Mg 2 Si 0.25 Sn 0.75 solid solutions prepared by liquid-solid reaction and hot-pressing methods.Na doping was carried out by mixing sodium acetate (CH 3 COONa) into the starting materials Mg (nominal purity: 99.9 %), Sn (99.999 %) granules, and Si powder (99.9999 %).The Na-doped samples had p-type conductivity with positive signs of Seebeck and Hall coefficients.Furthermore, hole concentrations increased rapidly with an increase in the amount of Na doping.These results revealed that the Na atoms acted as acceptors in Mg 2 Si 0.25 Sn 0.75 .The Seebeck coefficient of Na-doped samples showed positive values between 300 and 750 K.A maximum power factor of 0.88 × 10 -3 WmK -2 was observed for the Mg 2 Na 0.020 Si 0.25 Sn 0.75 sample at 500 K. The dimensionless figure of merit ZT reached 0.17 at 450 K for all Na-doped samples.

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Laboratory outlines for embryology

Cited by 23 publications

References 0 publications

The Effect of Gadolinium Doping on the Physical Properties of Lead Telluride

The Effect of Gadolinium Doping on the Physical Properties of Lead Telluride

Experimental observation of band inversion in the PbSnTe system

Thermoelectric Properties of Na-doped Mg<sub>2</sub>Si<sub>0.25</sub>Sn<sub>0.75</sub>

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