La 2 − x Sr x CuO 4 superconductor nanowire devices

Abstract

La 2-x Sr x CuO 4 nanowire devices have been fabricated and characterized using electrical transport measurements. Nanowires with widths down to 80 nm are patterned using high-resolution electron beam lithography. However, the narrowest nanowires show incomplete superconducting transitions with some residual resistance at T = 4 K. Here, we report on the refinement of the fabrication process to achieve narrower nanowire devices with complete superconducting transitions, opening the path to the study of novel physics arising from dimension-limited superconductivity on the nanoscale.

All-optical and microwave-free detection of Meissner screening using nitrogen-vacancy centers in diamond

“…A/cm 2 . This value is in very good agreement with recently reported values for LSCO nanowires 38 indicating the NV fluorescence drop as reliable quantity for characterizing thin film superconductors. Also note, that the corresponding j c value agrees very well with a calculation based on our SQUID measurement in Fig.…”

Fabricating Nanogaps inYBa2Cu3O7−δBaghdadi1, Arpaia2, Charpentier3 et al. 2015Phys. Rev. Applied211250View full textAdd to dashboardCite

“…In our previous report [29], we have shown that 50 nm is the minimum thickness of the Au capping required to preserve the pristine superconducting properties of the nanostructures. As also reported in other works, the decrease of the J C for width below 200 nm could result from a partial degradation of YBCO nanostructure during the patterning [31][32][33]. Our choice to minimize the thickness of the Au layer is dictated by the final goal to realize superconducting hybrid devices.…”

Influence of Fabrication Processes on Transport Properties of Superconducting Niobium Nitride Nanowires

“…Although a trend of decreasing T c and increasing onset resistance with increasing gallium dose was observed, all samples however showed complete superconducting transition. The residual resistance after ion milling was observed by Litombe et al on high T ccuprates 38 . Refinement of lithographic processes resulted We believe that the residual resistance in our case is due to nucleation of gallium ion-mediated nonsuperconducting regime along the cross-section of the nanowires at certain places.…”