2002
DOI: 10.1889/1.1830115
|View full text |Cite
|
Sign up to set email alerts
|

L‐4: Late‐New Paper: Active‐Matrix Operation of Electrophoretic Devices with Inkjet‐Printed Polymer Thin Film Transistors

Abstract: Active-matrix operation of an electrophoretic device has been achieved with all-polymer thin film transistors (TFTs). The source/drain, gate electrodes and gate lines of the TFTs were fabricated by inkjet printing with a conductive polymer, polyethylenedioxythiophene (PEDOT). Electrophoretic material was prepared from TiO 2 particles suspended in dyed solution, and was microencapsulated in polymer membrane spheres. The microcapsules were sandwiched between the polymer active-matrix array and a counter electrod… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
10
0

Year Published

2003
2003
2016
2016

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 15 publications
(10 citation statements)
references
References 14 publications
0
10
0
Order By: Relevance
“…The organic semiconductors used here are based on solutions of poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). [8][9][10] In this study, F8T2-1 has a higher weight-averaged molecular weight (Mw) than F8T2-2 (Mw = 50,000 and 33,000, respectively). The corresponding inherent viscosity values for the two polymers are 1.08 and 0.42 dL/g, respectively (THF, 25.0°C, 0.5 g/dL).…”
Section: Device Fabrication and Electrical Performancesmentioning
confidence: 78%
See 1 more Smart Citation
“…The organic semiconductors used here are based on solutions of poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). [8][9][10] In this study, F8T2-1 has a higher weight-averaged molecular weight (Mw) than F8T2-2 (Mw = 50,000 and 33,000, respectively). The corresponding inherent viscosity values for the two polymers are 1.08 and 0.42 dL/g, respectively (THF, 25.0°C, 0.5 g/dL).…”
Section: Device Fabrication and Electrical Performancesmentioning
confidence: 78%
“…This analysis is done when the TFT is in the linear regime, for low values of the S/D voltage. The equation describing the OP-TFT operation in linear regime at low V DS becomes (9) where µ FE int and V T int are the OP-TFT intrinsic fieldeffect mobility and threshold voltage, i.e., representative of the conduction channel, or ideal TFT only (without the parasitic S/D resistances). R S/D is the total series resistance (source and drain) of the TFT.…”
Section: Device Fabrication and Electrical Performancesmentioning
confidence: 99%
“…FPN is a good modeling tool of the knowledge system that is based on the Fuzzy Production Rules (FPRs), since FPN was put forward, scholars at home and abroad have carried out thorough and in-depth research on the knowledge representation and reasoning method that is based on FPN (Konopacki, 2005); Kawase, Newsome and Inoue, 2002;Li, Liu, Shao and Yin, 1995). The representation and reasoning algorithm of the knowledge that is based on FPN introduces the weight value into the FPN, and puts forward the Weighted Fuzzy Petri Nets (WFPN) (Kramers and Wannier, 1941).…”
Section: Introductionmentioning
confidence: 99%
“…16 Electrophoretic ink is a novel way to encapsulate electrophoretic materials so they can be dispersed in a binder and easily processed or printed on a plastic substrate. 17,18 Another intriguing material, known as Gyricon, consists of bichromal balls (one hemisphere white and one hemisphere black) encapsulated in a flexible film. 19 Both materials 16,17,19 have a white Lambertian reflection, and therefore are well suited for paper surrogate applications.…”
Section: Introductionmentioning
confidence: 99%