Kyropolous crystal growth of silicon for solar cell applications

Ravishankar, P.S.

doi:10.1016/0165-1633(85)90006-1

Cited by 16 publications

(7 citation statements)

References 2 publications

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“…[1][2][3][4][5][6][7][8] This method is similar to the Kyropoulos method. [9][10][11] In the NOC method, however, a low-temperature region must be intentionally established in a Si melt. The method enables the production of Si bulk single crystals without crucible contact owing to the distinct lowtemperature region in the Si melt.…”

Section: Introductionmentioning

confidence: 99%

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Nakajima¹,

Ono²,

Murai³

et al. 2016

Journal of Elec Materi

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Three zone heaters were generally used for a noncontact crucible (NOC) furnace. For practical reasons a simpler NOC furnace was developed with two zone heaters, which had a carbon heat holder to cover the three roles of each heater. Large low-temperature regions were obtained, and silicon ingots were grown in small crucibles with a large diameter and diameter ratio. Here, the diameter ratio is the ratio of the ingot diameter to the crucible diameter and can be as large as 0.90. The diameter ratio was controlled mainly by the temperature reduction of the first heater. Power changes of the second heater did not have a significant impact on the ingot diameter. Using this NOC furnace, maximum ingot diameters of 28.0, 33.5, and 45.0 cm were obtained using crucibles of 33, 40, and 50 cm in diameter, respectively. The oxygen concentration of the ingots did not strongly depend on the diameter ratio and were always low because convection in the Si melt was markedly suppressed by the carbon heat holder. Moreover, the oxygen concentration of the ingots has a tendency to become lower as the crucible diameter becomes larger.

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Section: Introductionmentioning

confidence: 99%

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Nakajima¹,

Ono²,

Murai³

et al. 2016

Journal of Elec Materi

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“…The Kyropoulos method is a similar method, in which crystals are mainly grown by the removal of heat through a seed holder [15,16]. Ravishankar attempted to grow Si ingots using the Kyropoulos method, but the ingots were grown while touching the crucible walls [17]. Using the noncontact crucible method, an ingot with several grains and twin boundaries was obtained using a silica crucible that had not been coated with Si 3 N 4 particles.…”

Section: Introductionmentioning

confidence: 99%

Growth of high-quality multicrystalline Si ingots using noncontact crucible method

Nakajima

Morishita

Murai

et al. 2012

Journal of Crystal Growth

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“…An attempt to apply Kyropoulos process was made in the 80′ by Ravishankar to grow large diameter silicon ingots but the growing crystal contacted the crucible walls and was thermally detached by partial re‐melting . Such intermittent solid contact between the crystal and the crucible complicated the process and exposed the ingot to consequent mechanical induced stress cancelling one of the main benefits of the approach.…”

Section: Introductionmentioning

confidence: 99%

Elimination of Oxidation‐Induced Stacking Faults in Silicon Single Crystals Using the Kyropoulos Crystal Growth Method

Nouri

Chichignoud

Albaric

et al. 2018

Physica Status Solidi (a)

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Oxidation‐induced stacking faults (OSF rings) is a detrimental recurrent defect that appears along the silicon monocrystalline ingot obtained by Czochralski method. Most of the prior studies, related to Czochralski, focus on the increase of pulling rate to reduce this defect; the present work puts forward the low thermal gradient as an efficient parameter to avoid its formation. A modified Kyropoulos configuration is used to grow silicon crystals at low thermal gradient. Experiment shows that even a low pull‐up velocity, slower than the growth rate, is sufficient to completely eliminate this defect. The top part of the crystal, grown without any pull up has OSF rings. On the other hand, the parts of the crystal obtained with considerably low pull‐up velocity, in order to keep the growth below the free surface of the melt, do not have OSF rings. Even at low pull‐up velocity, the OSF defect can be avoided thanks to the controlled low thermal gradient in the crystal.

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Kyropolous crystal growth of silicon for solar cell applications

Cited by 16 publications

References 2 publications

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Growth of high-quality multicrystalline Si ingots using noncontact crucible method

Elimination of Oxidation‐Induced Stacking Faults in Silicon Single Crystals Using the Kyropoulos Crystal Growth Method

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