Granular aluminum is a promising material for high kinetic inductance devices such as qubit circuits. It has the advantage over atomically disordered materials such as NbNx, to maintain a high kinetic inductance concomitantly with a high quality factor. We show that high quality nano-scale granular aluminum films having a sharp superconducting transition with normal state resistivity values on the order of 1×105 μΩ cm and kinetic inductance values on the order of 10 nH/◻ can be obtained, surpassing the state-of-the-art values. We argue that this is a result of the different nature of the metal-to-insulator transition, being electronic correlations driven (Mott type) in the former and disorder driven (Anderson type) in the latter.