Kubo Formalism for Resonant Tunneling in Double Barrier Heterostructures

Abstract

The electronic and transport properties of double barrier structures are studied using the Kubo formula for the electrical conductivity and a tight-binding respresentation for the Hamiltonian. The theory is able to reproduce the experimental I -U characteristic curves. A self-consistent Hartree treatment permits to study the charge distribution and its influence on the position of the resonant energy levels and on the tunneling properties as a function of the doping of the sample.Les propri6tCs Clectroniques et de transporte des structures de barriere double sont CtudiCes en employant la formule de Kubo pour la conductivite Clectronique et la representation ((tight-binding)). I1 est possible de reproduire avec la thCorie des courbes caracteristiques experimentaux I-U. Un traitement de Hartree auto-consistant nous permets detudier la distribution de charge et son influence sur la position des niveaux CnergCtiques resonantes et sur les propriCtCs de tunnelement dkpendantes du dopage de Iechantillon.

Magnetotunneling in GaAs/AlxGa1-xAs Double Barrier Heterostructures with and without On-Center-Well Impurity Planes

“…Similar to the theoretical results reported by Gonçalves da Silva and Mendez [16] our model predicts resonant biases, which are lower than the observed ones, but in better agreement with experimental results. We believe, that the presence of the barriers modifies the electronic charge distribution of the device affecting the potential profile due to the electron-electron repulsion changing the energy of the resonant channels, and so requiring different values in bias for tunneling [24].…”