Ku‐ and K‐band high‐efficiency GaN MMIC HPA chipset for satellite communications

Fong, A.; Srisathapat, J.; Chin, C.; Telvin, F.; Grebliunas, John R.; Wu, Guoying

doi:10.1049/el.2018.7179

Cited by 11 publications

(3 citation statements)

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“…The satellite-based communication system, characterized by satellite-ground interaction, is extensively used, not only in satellite communication per se, but also in remote-sensing measurements, and various other fields [6]. The Ku-Band, known for its extended signal-transmission range and robust anti-interference capability, is widely employed in satellite-based communications [7][8][9][10][11]. The power amplifier (PA), a critical component in the satellite-based communication system, is primarily employed for amplifying and transmitting high-power RF signals.…”

Section: Introductionmentioning

confidence: 99%

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Chen,

Wang,

Zhang

et al. 2024

PLoS ONE

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This paper presents a groundbreaking Ku-band 20W RF front-end power amplifier (PA), designed to address numerous challenges encountered by satellite communication systems, including those pertaining to stability, linearity, cost, and size. The manuscript commences with an exhaustive discussion of system design and operational principles, emphasizing the intricacies of low-noise amplification, and incorporating key considerations such as noise factors, stability analysis, gain, and gain flatness. Subsequently, an in-depth study is conducted on various components of the RF chain, including the pre-amplification module, driver-amplification module, and final-stage amplification module. The holistic design extends to the inclusion of the display and control unit, featuring the power-control module, monitoring module, and overall layout design of the PA. It is meticulously tailored to meet the specific demands of satellite communication. Following this, a thorough exploration of electromagnetic simulation and measurement results ensues, providing validation for the precision and reliability of the proposed design. Finally, the feasibility of that design is substantiated through systematic system design, prototype production, and exhaustive experimental testing. It is noteworthy that, in the space-simulation environmental test, emphasis is placed on the excellent performance of the Star Ku-band PA within the 13.75GHz to 14.5GHz frequency range. Detailed power scan measurements reveal a P1dB of 43dBm, maintaining output power flatness < ± 0.5dBm across the entire frequency and temperature spectrum. Third-order intermodulation scan measurements indicate a third-order intermodulation of ≤ -23dBc. Detailed results of power monitoring demonstrate a range from +18dBm to +54dBm. Scans of spurious suppression and harmonic suppression, meanwhile, show that the PA evinces spurious suppression ≤ -65dBc and harmonic suppression ≤ -60dBc. Rigorous phase-scan measurements exhibit a phase-shift adjustment range of 0° to 360°, with a step of 5.625°, and a phase-shift accuracy of 0.5dB. Detailed data from gain-scan measurements show a gain-adjustment range of 0dB to 30dB, with a gain flatness of ± 0.5dB. Attenuation error is ≤ 1%. These test parameters perfectly align with the practical application requirements of the technical specifications. When compared to existing Ku-band PAs, our design reflects a deeper consideration of specific requirements in satellite communication, ensuring its outstanding performance and uniqueness. This PA features good stability, high linearity, low cost, and compact modularity, ensuring continuous and stable power output. These features position the proposed system as a leader within the market. Successful orbital deployment not only validates its operational stability; it also makes a significant contribution to the advancement of China’s satellite PA technology, generating positive socio-economic benefits.

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Section: Introductionmentioning

confidence: 99%

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Chen,

Wang,

Zhang

et al. 2024

PLoS ONE

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“…Indeed, aspects such as lower cost, graceful degradation, form factor, etc., can introduce significant benefits at satellite level. In this context, several monolithic microwave integrated circuits (MMICs) PAs have been recently demonstrated up to K/Q band [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

A high efficiency 10W MMIC PA for K-b and satellite communications

Colantonio

Giofrè

Vitobello³

et al. 2021

Int. J. Microw. Wireless Technol.

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This paper discusses the design steps and experimental characterization of a monolithic microwave integrated circuit (MMIC) power amplifier developed for the next generation of K-band 17.3–20.2 GHz very high throughput satellites. The technology used is a commercially available 100-nm gate length gallium nitride on silicon process. The chip was developed taking into account the demanding constraints of the spacecraft and, in particular, carefully considering the thermal constraints of such technology, in order to keep the junction temperature in all devices below 160°C in the worst-case condition (i.e., maximum environmental temperature of 85°C). The realized MMIC, based on a three-stage architecture, was first characterized on-wafer in pulsed regime and, subsequently, mounted in a test-jig and characterized under continuous wave operating conditions. In 17.3–20.2 GHz operating bandwidth, the built amplifier provides an output power >40 dBm with a power added efficiency close to 30% (peak >40%) and 22 dB of power gain.

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“…Higher critical electric fields in these materials enable thinner, more highly doped voltageblocking layers, which can reduce on-resistance by up to two orders of magnitude in majority carrier devices compared to Si. The two most developed wide bandgap semiconductors are SiC [4][5][6][7][8] and GaN, [9][10][11][12][13][14][15] with SiC now commercialized for many applications in power management and GaN being used in X-/Ku-band RF power devices and monolithic microwave integrated circuits (MMICs). Even higher power figures-of-merit are theoretically possible with BN, diamond, high-Al AlGaN and Ga 2 O 3 .…”

mentioning

confidence: 99%

Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga₂O₃ Rectifiers

Xian

Fares

Ren

et al. 2020

ECS J. Solid State Sci. Technol.

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We report a study of the effect of different Schottky contact orientations on maximum current achievable before failure and also temperature distributions in vertical geometry Ga2O3 rectifiers. Due to the strong anisotropy of thermal conductivity in Ga2O3, asymmetrical Schottky contacts are needed to provide higher current density with enhanced lateral thermal dissipation, symmetrical temperature profile and lower junction temperature at a specific diode current density compared to symmetrical contacts. Devices with rectangular contacts fabricated on (001) orientated wafers with their long axis perpendicular to the [010] crystallographic direction show much greater resistance to thermal degradation under forward bias conditions than either square contact rectifiers or those oriented with their long axis oriented perpendicular to the [100] direction. An optimized contact orientation can produce a 25% increase in maximum forward current. Practical operating conditions for Ga2O3 power devices will need to encompass all aspects of thermal management, including these geometric factors as well as active and passive cooling.

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Ku‐ and K‐band high‐efficiency GaN MMIC HPA chipset for satellite communications

Cited by 11 publications

References 0 publications

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

A high efficiency 10W MMIC PA for K-b and satellite communications

Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga₂O₃ Rectifiers

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Ku‐ and K‐band high‐efficiency GaN MMIC HPA chipset for satellite communications

Cited by 11 publications

References 0 publications

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

A high efficiency 10W MMIC PA for K-b and satellite communications

Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers

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Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga₂O₃ Rectifiers