Krypton entrapment in continuous-biased sputter-deposited glassy metals

Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardment

“…However, there are limited data on Ar incorporation in InP as compared to Si 10,11 and GaAs. 12,13 Previous published work has focused on the effect of low-energy Ar ϩ bombardment on the surface stoichiometry of InP. 9,14-26 A summary of recently published data of sputtered InP samples have shown the surface region to be either In rich or stoichiometric.…”

Chapter 1 General introduction

“…The deposited layers have to perform at temperatures of 800 -900 0 e and for that reason the high temperature behaviour of the deposited layers has to be studied. From literature [48][49][50][51][52][53] it is known that during a post deposition treatment a number of changes may occur e.g. recrystallization, outgassing, stress relaxation etc.…”

Chapter 1 General Introduction

“…The deposited layers have to perform at temperatures of 800 -900 0 e and for that reason the high temperature behaviour of the deposited layers has to be studied. From literature [48][49][50][51][52][53] it is known that during a post deposition treatment a number of changes may occur e.g. recrystallization, outgassing, stress relaxation etc.…”