Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO₂ Gate Insulator for Analog Memory Application

Abstract

In this research, we investigated the threshold voltage (V TH ) control by partial polarization of metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5 nm-thick nondoped HfO 2 gate insulator utilizing Kr-plasma sputtering for Pt gate electrode deposition. The remnant polarization (2P r ) of 7.2 µC/cm 2 was realized by Kr-plasma sputtering for Pt gate electrode deposition. The memory window (MW) of 0.58 V was realized by the pulse amplitude and width of −5/5 V, 100 ms. Furthermore, the V TH of MFSFET was controllable by program/erase (P/E) input pulse even with the pulse width below 100 ns which may be caused by the reduction of leakage current with decreasing plasma damage.

Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO2 formation deposited on a Si(100) substrate

“…We have reported the reduction of SiO x IL thickness to 1.7 nm in the case of the 5 nm-thick HfO 2 with PMA at 500 °C. 28,32) We will investigate the effect of ELA for the HfO 2 with thinner SiO x IL next time.…”

“…[19][20][21][22] We have realized the ferroelectric nondoped HfO 2 (FeND-HfO 2 ) which was directly deposited on a Si substrate by RF magnetron sputtering utilizing strain-controlled deposition. [23][24][25][26][27][28][29][30][31][32][33][34] Although the annealing temperature was decreased to 500 °C, memory characteristics such as the MW are necessary to be improved. We have used rapid thermal annealing (RTA) for the crystallization of HfO 2 .…”