Kondo Screening and Magnetism at Interfaces

Euverte, Axel; Hébert, F.; Chiesa, Simone; Scalettar, R. T.; Batrouni, G. G.

doi:10.1103/physrevlett.108.246401

Cited by 10 publications

(16 citation statements)

References 21 publications

(23 reference statements)

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“…6(a) shows the nontrivial peak of the penetration depth, whose position is consistent with the hybridization strength V where S AF reaches its minimum. This behavior of S AF (L) is qualitatively similar to the multilayer metal-insulator interface in the three-dimensional Hubbard model, 20 and can be attributed to singlet formation at the metal-insulator interface, which both suppresses S AF (L = 1) and also leaves the remaining lines L > 1 decoupled from the metal.…”

Section: Effect Of Variation Of Interface Hoppingmentioning

confidence: 54%

“…This enables us, for example, to evaluate the penetration depth across the boundary, since the interface effects have sufficient room to heal before the lattice edge. The behavior of the Hubbard model across a planar interface in a 3D material on systems of smaller linear extent has been explored by Euverte et al 20 The key finding is that up to an interface hopping V , which is on the order of the bulk hybridization t, the effects of the interface can extend well past the two layers immediately at the interface. That is, the interface affects properties 3-4 layers deep on both the strongly and weakly correlated sides of the boundary.…”

Section: Introductionmentioning

confidence: 99%

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Density of states and magnetic correlations at a metal-Mott insulator interface

2012

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The possibility of novel behavior at interfaces between strongly and weakly correlated materials has come under increased study recently. In this paper, we use determinant quantum Monte Carlo to determine the interpenetration of metallic and Mott-insulator physics across an interface in the two-dimensional Hubbard Hamiltonian. We quantify the behavior of the density of states at the Fermi level and the short-and long-range antiferromagnetism as functions of the distance from the interface and with different interaction strength, temperature, and hopping across the interface. Induced metallic behavior into the insulator is evident over several lattice spacings, whereas antiferromagnetic correlations remain small on the metallic side. At large interface hopping, singlets form between the two boundary layers, shielding the two systems from each other.

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Section: Effect Of Variation Of Interface Hoppingmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Density of states and magnetic correlations at a metal-Mott insulator interface

2012

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“…Unusual properties have been discovered at these interfaces, such as strongly confined metallic phases 13 , magnetism 14 , and superconductivity 15 to name a few. The occurrence of a metallic interface through electronic rearrangement is one of the intriguing features of the BI/MI heterostructures [16][17][18][19][20][21] . Naturally we may ask how the situation is modified when the band insulator is replaced by a topological insulator (TI).…”

Section: Pacs Numbersmentioning

confidence: 99%

Proximity effects in a topological-insulator/Mott-insulator heterostructure

Ueda¹,

Kawakami²,

Sigrist³

2013

Phys. Rev. B

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We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized mid-gap states inside the MI region, which still have a remnant of the helical energy-spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling V , largely enhances the electron mass inside the MI and also splits a single Dirac-cone at edge sites into the spatially-separated two Dirac-cones in the strong V region. PACS numbers:Remarkable progress has been made in the study of the topological insulator (TI) as a new class of materials characterized by an energy gap in the bulk but gapless edge (surface) states at its boundary 1-3 . In recent experiments, the observation of such TIs is reported for HgTe/CdTe quantum wells 2,4 and some bismuth compounds (such as Bi 2 Se 3 and Bi 1−x Sb x ) 5-8 , corresponding to two-and three-dimensional TIs, respectively. Edge states of TIs are protected by non-trivial topological properties of the electronic bulk spectrum, thereby being robust against small perturbations conserving timereversal symmetry, such as non-magnetic impurities 9 . Hence, as long as the bulk gap exists, the low-energy physics of the TI is dominated by the edge states.Heterostructures involving the TIs are currently the subject of intensive studies as they might have applications in future spintronics devices. They also provide a versatile platform for searching exotic interface phenomena, such as Majonara bound states 10,11 and anomalous magnetoresistance 12 . In particular, we would like to explore the interface physics which emerges in a heterostructure composed of a TI and strongly correlated materials, since the previous studies of TI have mainly focused on heterostructures involving non-interacting electrons.Regarding heterostructures with electron correlations, recent years have seen tremendous advances in producing high-quality interfaces composed of various materials such as band-insulator/Mott-insulator (BI/MI) or different types of band insulators. Unusual properties have been discovered at these interfaces, such as strongly confined metallic phases 13 , magnetism 14 , and superconductivity 15 to name a few. The occurrence of a metallic interface through electronic rearrangement is one of the intriguing features of the BI/MI heterostructures 16-21 . Naturally we may ask how the situation is modified when the band insulator is replaced by a topological insulator (TI). The interface metallic state should be influenced by the presence of topological edge states and the interplay between such edge states and the strong electron correlation can give rise to novel physical properties.In this study, we analyze the electronic properties at a two-dimensional heterostructure consisting of a paramagnetic Mott insulator (MI) and a TI, by using a rather simple microscopic model for both insulators of TI/MI hete...

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“…A significant number of theoretical studies on the proximity effects of electron-electron interaction in layered systems have been carried out. Such studies include proximity effects in Hubbard layers [10][11][12][13][14][15][16][17][18] , FalicovKimball layers 19 or f -electron superlattices 20,21 . Zenia et al 12 demonstrated that a Mott insulator transforms to a "fragile" Fermi liquid if sandwiched between metallic leads.…”

Section: Introductionmentioning

confidence: 99%

Spectral changes in layeredf-electron systems induced by Kondo hole substitution in the boundary layer

et al. 2015

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We investigate the effect of disorder on the dynamical spectrum of layered f -electron systems. With random dilution of f -sites in a single Kondo insulating layer, we explore the range and extent to which Kondo hole incoherence can penetrate into adjacent layers. We consider three cases of neighboring layers: band insulator, Kondo insulator and simple metal. The disorder-induced spectral weight transfer, used here for quantification of the proximity effect, decays algebraically with distance from the boundary layer. Further, we show that the spectral weight transfer is highly dependent on the frequency range considered as well as the presence of interactions in the clean adjacent layers. The changes in the low frequency spectrum are very similar when the adjacent layers are either metallic or Kondo insulating, and hence are independent of interactions. In stark contrast, a distinct picture emerges for the spectral weight transfers across large energy scales. The spectral weight transfer over all energy scales is much higher when the adjacent layers are non-interacting as compared to when they are strongly interacting Kondo insulators. Thus, over all scales, interactions screen the disorder effects significantly. We discuss the possibility of a crossover from non-Fermi liquid to Fermi liquid behavior upon increasing the ratio of clean to disordered layers in particle-hole asymmetric systems.

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Kondo Screening and Magnetism at Interfaces

Cited by 10 publications

References 21 publications

Density of states and magnetic correlations at a metal-Mott insulator interface

Density of states and magnetic correlations at a metal-Mott insulator interface

Proximity effects in a topological-insulator/Mott-insulator heterostructure

Spectral changes in layeredf-electron systems induced by Kondo hole substitution in the boundary layer

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