2003
DOI: 10.1023/a:1025380518197
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Cited by 16 publications
(3 citation statements)
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“…During the third technological step the 28 SiF 4 gas was converted into silane, 28 SiH 4 . For the production of high-purity silane the hydride method was used [17]. First, the synthesis of silane was carried out by the reaction of high-purity silicon tetrafluoride with calcium hydride 28 SiF 4 + 2CaH 2 → 28 SiH 4 + 2CaF 2 .…”
Section: Silanisation and Purification Of Silanementioning
confidence: 99%
“…During the third technological step the 28 SiF 4 gas was converted into silane, 28 SiH 4 . For the production of high-purity silane the hydride method was used [17]. First, the synthesis of silane was carried out by the reaction of high-purity silicon tetrafluoride with calcium hydride 28 SiF 4 + 2CaH 2 → 28 SiH 4 + 2CaF 2 .…”
Section: Silanisation and Purification Of Silanementioning
confidence: 99%
“…Polycrystalline silicon was prepared by thermal decomposition of monosilane enriched in one of the silicon isotopes as described in [3,4]. The decomposition was proceed on a graphite substrate surface at 800…”
Section: Preparation Of Single Crystals and Samples For Measurementsmentioning
confidence: 99%
“…Polycrystalline silicon was prepared by thermal decomposition of monosilane enriched in one of the silicon isotopes as described in [3,4]. The decomposition was proceed on a graphite substrate surface at 800 • C. After a few mm thick layer was deposited, polycrystalline silicon was separated from the graphite substrate, remelted to form a rod, and purified by 10 float zoning passes.…”
Section: Introductionmentioning
confidence: 99%