An investigation is undertaken to study the influence of thin layers of tin, which are sandwiched between gold films and SiO2 substrates, on the thermal stability of gold (as used for metallizations in microelectronic devices). It is found that tin has, similarly as indium, a stabilizing influence on the gold grain structure when the Au/Sn composite film is annealed between 300 and 500 °C in air. The tin from the underlayer is found to diffuse through the gold film to form SnO2 on the free surface and near the grain boundaries, which contributes to the prevention of hole and hillock formation and to an only minimal grain growth during thermal treatment. No preferred orientation of the gold films is found.