Kinetics of the Silicon-Silicontetrachloride Reaction in a Flow System

Abstract

The kinetics of the heterogeneous reaction normalSi+SiCl4=2SiCl2 have been studied in a flow system with helium as the carrier gas. For this reaction the postulated rate expression d normalSinormaldt=−1.0×106exp)(−67000RT P41/2+9exp)(−29000RT P2 gSi cm−2 sec−1 was shown to describe the experimental results. The flow system data has been analyzed in terms of quantitatively measurable system parameters. Consequently true rather than apparent constants are found.