Kinetics of the multiferroic switching in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MnWO</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math>

Baum, M.; Leist, Jeannis; Finger, T.; Schmalzl, K.; Hiess, A.; Regnault, L.P.; Becker, Petra; Bohatý, L.; Eckold, G.; Braden, M.

doi:10.1103/physrevb.89.144406

Cited by 26 publications

(27 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Phenomenologically it has been demonstrated that a reorientation by acting on the improper (electric) order parameter tends to be slow with reversal times in the millisecond range 38,39 . By acting on the primary (magnetic) order parameter, theory predicts scenarios with a reversal within a few picoseconds, yet at so far unrealistically large fields 40 .…”

Section: Discussionmentioning

confidence: 99%

Polarization control at spin-driven ferroelectric domain walls

et al. 2015

View full text Add to dashboard Cite

Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn 0.95 Co 0.05 WO 4 . With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.

show abstract

Section: Discussionmentioning

confidence: 99%

Polarization control at spin-driven ferroelectric domain walls

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Polycrystalline InTaO 4 was synthesized by a ceramic route starting from pre-dried In 2 transmission electron microscope operated at 200 KeV at the Servei Central de Suport a la Investigacio Experimental (SC-SIE) from Universitat de Valencia. It was also verified by powder XRD measurements, using Cu K α radiation, that the samples were single phased and presented the wolframitetype structure (P 2/c).…”

Section: Methodsmentioning

confidence: 99%

“…Ternary oxides of the form MTO 4 have been extensively studied for their interesting physical properties, in particular, those oxides crystallizing either in the scheelite or the wolframite structure [1][2][3][4][5][6][7][8][9][10]. During the last decade, the most studied members of this family of materials have been the orthotungstates and orthomolybdates, which have many technological applications [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductorInTaO4

et al. 2016

View full text Add to dashboard Cite

A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTaO 4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond-anvil cell with ab initio calculations. High-pressure optical-absorption measurements were also carried out. The high-pressure phase has a monoclinic structure that shares the same space group with the low-pressure phase (P 2/c). The structure of the high-pressure phase can be considered as a slight distortion of an orthorhombic structure described by space group Pcna. The phase transition occurs together with a unit-cell volume collapse and an electronic band-gap collapse observed by experiments and calculations. Additionally, a band crossing is found to occur in the low-pressure phase near 7 GPa. The pressure dependence of all the Raman-active modes is reported for both phases as well as the pressure dependence of unit-cell parameters and the equations of state. Calculations also provide information on infrared-active phonons and bond distances. These findings provide insights into the effects of pressure on the physical properties of InTaO 4 .

show abstract

“…17 Another example is MnWO 4 , where electric polarization is generated by an elliptical spiral, 18 the chirality of which can be controlled by an electric field. 19 In Cr 2 O 3 , multiple co-existing mechanisms may even be possible.…”

Section: Pacs Numbersmentioning

confidence: 99%