Kinetics of slow buildup of photoconductance in <i>n</i>-type 6H–SiC

Evwaraye, A. O.; Smith, Steven R.; Mitchel, W. C.

doi:10.1063/1.113490

Cited by 15 publications

(4 citation statements)

References 15 publications

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“…Such a study is very important for SiC, because a long lifetime of excess carriers (or persistent photoconductivity) has been observed for SiC. [6][7][8][9][10] It is well known that a trap with a very small σ T (or a large E cap ) for majority carriers causes persistent photoconductivity. The DX center in Al x Ga 1−x As is the best known example of such defects.…”

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confidence: 99%

Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC

Ichimura

Koga

Yamada

et al. 1998

Jpn. J. Appl. Phys.

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The n-type 3C-SiC grown on Si(001) substrates by chemical vapor deposition was characterized by deep-level-transient spectroscopy (DLTS). DLTS peaks appeared near 160 K and 260 K with the emission rate being 26 s −1 . For the shallower level, the activation energy E a is 0.34 eV and the capture cross section at infinite temperature σ ∞ is 6.0 × 10 −17 cm 2 . For the deeper level, E a = 0.52 eV and σ ∞ = 9.5 × 10 −18 cm 2 . The capture cross section at the peak temperature was obtained by changing the injection pulse width, and it was found that the energy barrier of electron capture is negligibly small for these two traps.

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confidence: 99%

Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC

Ichimura

Koga

Yamada

et al. 1998

Jpn. J. Appl. Phys.

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“…We have obtained a value for the conduction band discontinuity of AEC = 0.14 eV, and for the valence band discontinuity of AEV = 0.17 eV. 17 Figure 4 is a schematic of the band alignments as predicted by this model. This is a staggered type 1 alignment where both the conduction band and the valence band of the smaller bandgap polytype, 6H-SiC lie completely within the gap of the larger, 4H-SiC.…”

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confidence: 97%

Electrical and Optical Properties of Defects in N-Type 4h-Sic

1995

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Several n-type 4H-SiC samples grown by the physical vapor transport technique were studied using both thermal and optical admittance spectroscopy. The ionization energy ED for nitrogen donors in 4H-SiC was determined to be 0.053 eV and 0.10 eV below the conduction band. This agrees reasonably well with the values of 0.052 eV and 0.092 eV determined by IR absorption measurements. It is believed that EC-0.053 eV is the ionization energy of the nitrogen atom occupying the hexagonal site (h). The 0.10 eV activation energy has been attributed to the nitrogen atoms occupying the cubic sites(k).The optical admittance studies reveal five conductance peaks. One of these corresponds to the band-to-band transitions from which the bandgap of 3.41 eV was determined at 40K. The other four conductance peaks correspond to transitions from defect levels to the conduction band. These defects are located at EC-1.73 eV, EC-1.18 eV, EC-0.87 eV, and EC-0.72 eV.

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“…[1] The measurement of the AC conductance of a transparent Schottky diode on a semiconductor as a function of time reveals the nature of the conductance decay after illumination. [3][4][5] These studies on 4H-SiC, principally, approach the problem as a function of wavelength, hence photon energy. [2] This measurement differs from photo conductivity, in that it is a vertical measurement across the depletion region under the diode.…”

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confidence: 99%

Spectral Characterization of Persistent Photo Conductance in SiC

2006

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The transient photo response of 4H-and 6H-SiC specimens at various wavelengths has been studied using Optical Admittance Spectroscopy. Differences in the transient response were found for excitation and recombination for different specimens in both polytypes. The results indicate that optical excitation of charge carriers to the conduction band is a single transition, but recombination of free carriers from the conduction band is a process that may involve multiple transitions to the ground state mediated by deep centers in the material. Similarities in the persistent photo conductance after excitation from deep centers, and after excitation at above bandgap energies, suggest that carriers from the conduction band can drop through deep centers on the way to the valence band. Annealing studies also indicate that stoichiometry can play a significant role in the PPC effect.

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Kinetics of slow buildup of photoconductance in n-type 6H–SiC

Cited by 15 publications

References 15 publications

Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC

Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC

Electrical and Optical Properties of Defects in N-Type 4h-Sic

Spectral Characterization of Persistent Photo Conductance in SiC

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