Abstract:Anodic polarization of nitinol in acetic acid under galvanostatic conditions produces oxide films composed mainly of TiO 2 . An exponential current-field relation is valid during ionic conduction through the growing oxide, in which the field coefficient is related to the jump distance. Transport processes in anodic films have been discussed in terms of a cooperative mechanism developed for amorphous oxide films on valve metals, in which both metal and oxygen ions were involved in ionic conduction. For more cry… Show more
“…Due to the oxophilic nature of titanium, calcination at elevated temperatures results in the formation of a capping TiO 2 film. Our initial efforts are focused on 50 and 100 nm rutile TiO 2 films (Figure S8) that were grown by aerobic oxidation at 500 °C for 30 and 120 min, respectively. − …”
Section: Resultsmentioning
confidence: 88%
“…The foils were then oxidized at 500 °C under aerobic conditions for 30 or 120 min. Because of the oxophilic nature of titanium, calcination at elevated temperatures results in a rutile TiO 2 capping later, wherein the thickness can be controlled by annealing time and temperature. , From UV–vis interferograms, the thickness of the TiO 2 film is estimated to be ∼50 and 100 nm for samples oxidized 30 and 120 min, respectively . All TiO 2 films showed some nickel on the surface by XPS, and its concentration was Nitinol batch dependent.…”
We
report the first observation of a reversible, degenerate doping
of titanium dioxide with strain, which is referred to as a semiconductor-to-metal
transition. Application of tensile strain to a ∼50 nm film
of rutile TiO2 thermally grown on a superelastic nitinol
(NiTi intermetallic) substrate causes reversible degenerate doping
as evidenced by electrochemistry, X-ray photoelectron spectroscopy
(XPS), and conducting atomic force microscopy (CAFM). Cyclic voltammetry
and impedance measurements show behavior characteristic of a highly
doped n-type semiconductor for unstrained TiO2 transitioning to metallic behavior under tensile strain.
The transition reverses when strain is removed. Valence band XPS spectra
show that samples strained to 5% exhibit metallic-like intensity near
the Fermi level. Strain also induces a distinct transition in CAFM
current–voltage curves from rectifying (typical of an n-type semiconductor) to ohmic (metal-like) behavior. We
propose that strain raises the energy distribution of oxygen vacancies
(n-type dopants) near the conduction band and causes
an increase in carrier concentration. As the carrier concentration
is increased, the width of the depletion region is reduced, which
then permits electron tunneling through the space charge barrier resulting
in the observed metallic behavior.
“…Due to the oxophilic nature of titanium, calcination at elevated temperatures results in the formation of a capping TiO 2 film. Our initial efforts are focused on 50 and 100 nm rutile TiO 2 films (Figure S8) that were grown by aerobic oxidation at 500 °C for 30 and 120 min, respectively. − …”
Section: Resultsmentioning
confidence: 88%
“…The foils were then oxidized at 500 °C under aerobic conditions for 30 or 120 min. Because of the oxophilic nature of titanium, calcination at elevated temperatures results in a rutile TiO 2 capping later, wherein the thickness can be controlled by annealing time and temperature. , From UV–vis interferograms, the thickness of the TiO 2 film is estimated to be ∼50 and 100 nm for samples oxidized 30 and 120 min, respectively . All TiO 2 films showed some nickel on the surface by XPS, and its concentration was Nitinol batch dependent.…”
We
report the first observation of a reversible, degenerate doping
of titanium dioxide with strain, which is referred to as a semiconductor-to-metal
transition. Application of tensile strain to a ∼50 nm film
of rutile TiO2 thermally grown on a superelastic nitinol
(NiTi intermetallic) substrate causes reversible degenerate doping
as evidenced by electrochemistry, X-ray photoelectron spectroscopy
(XPS), and conducting atomic force microscopy (CAFM). Cyclic voltammetry
and impedance measurements show behavior characteristic of a highly
doped n-type semiconductor for unstrained TiO2 transitioning to metallic behavior under tensile strain.
The transition reverses when strain is removed. Valence band XPS spectra
show that samples strained to 5% exhibit metallic-like intensity near
the Fermi level. Strain also induces a distinct transition in CAFM
current–voltage curves from rectifying (typical of an n-type semiconductor) to ohmic (metal-like) behavior. We
propose that strain raises the energy distribution of oxygen vacancies
(n-type dopants) near the conduction band and causes
an increase in carrier concentration. As the carrier concentration
is increased, the width of the depletion region is reduced, which
then permits electron tunneling through the space charge barrier resulting
in the observed metallic behavior.
“…) in terms of biocompatibility, the nickel content should be kept as low as possible to minimize the possibility of its release. The following Ti/Ni ratios were achieved by other methods: 33.1 [3] and 7.1 [31] by water boiling, 23.4 by water autoclaving [3], 11.5 by anodization in acetic acid [33], 3.6 by oxidation at 600°C [31], and 2.5 by chemical etching [3].…”
Section: Chemical Composition Of Odp Filmsmentioning
confidence: 99%
“…The spectra recorded on NiTi electrode covered with ODP layers prepared by immersion or by spraying were evaluated using parameters of standard peaks (Table 1) [31][32][33]. During the deconvolution of the spectra, all peak parameters, except height, were kept constant.…”
mentioning
confidence: 99%
“…The Ti 2p 3/2 peak for metal state is centered at 454.4 eV, and that for Ni metal shows a main 2p 3/2 peak at 852.9 eV and a satellite (sat. )~6.5 eV above it [31][32][33]. As a standard for TiO 2 , XPS spectrum for Ti thermally oxidized for 1 h in an oxygen atmosphere at 450°C was recorded [32].…”
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