Oxygen molecules in the lowest metastable state, O 2 (a 1 g ), play an important role in oxygen plasmas due to their high reactivity and significant concentrations. The accumulation of high densities of O 2 (a 1 g ) occurs due to its low quenching rate. This paper demonstrates the existence, at high gas temperatures (700-1700K), of fast quenching of O 2 (a 1 g ) by O( 3 P) atoms, a process that has not been considered in previous models. Experiments were carried out at oxygen pressures of 10-100Torr in an 81MHz CCP discharge in a quartz tube with external electrodes. This setup provides high absorbed power density, leading to both high gas temperatures and significant O( 3 P) densities. We observe that the O 2 (a 1 g ) density is significantly limited at high gas temperatures by rapid quenching by atomic oxygen . The results were interpreted using a self-consistent 1D discharge model. The observations can only be explained by the inclusion of a rapid quenching, with an activation energy in the range of 0.54-0.69eV. The rate constant was determined over a wide range of discharge conditions (P = 20-100 Torr and T g = 800-1700 K), giving values between 3•10 -11 ×exp(-8000/T) cm 3 /s to 1.5•10 -11 ×exp(-6300/T) cm 3 /s. A possible mechanism for this process is discussed. Measurements of the density of metastable O 2 (b 1 g + ) molecules also indicated the existence of quenching by atomic oxygen, with a somewhat lower activation energy of ~0.32 eV. The variations of the measured [O 2 (b 1 g + )]/N molefraction could be fitted by the model using a rate constant -210 -11 exp(-3700/T) cm 3 /s for this process. These quenching processes of metastable O 2 (a 1 g ) and O 2 (b 1 g + ) molecules by oxygen atoms are important for oxygen plasmas and could have a significant impact on the kinetics of oxygen-containing mixtures at higher gas temperatures, for example in plasma-assisted combustion or in high-pressure plasma processing reactors.