Kinetics of Formation and Growth of Microdefects in Crystals

Olikhovsky, S. J.; Belova, M. M.; Kochelab, Ye. V.

doi:10.15407/ufm.07.03.135

Cited by 2 publications

(1 citation statement)

References 69 publications

(138 reference statements)

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“…The damaged layer is a group of structural defects in the form of oxygen precipitate/dislocation agglomerates and stacking faults. The formation of the damaged layer is caused by the well-studied decomposition of supersaturated oxygen solid solution which is always present in Czochralski grown crystals [12]. Typical damaged layer formation process includes four heat treatments of as-grown silicon wafers:…”

Section: Intrinsic Gettersmentioning

confidence: 99%

Getters in silicon

Харченко¹

2019

MoEM

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Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine containing compounds have been analyzed. Formation of structural defect based getters requires producing intrinsic sources of dislocation generation and precipitate/dislocation agglomerate formation. We show that dislocations are generated at microcrack mouths and form a low-mobility dislocation network at inactive wafer sides. In the latter case the defects are generated in the wafer region adjacent to the active layer of the electronic component. The generation of intrinsic getters is based on the decomposition of the supersaturated oxygen solid solution in silicon which favors the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Stacking faults also form, i.e., oxide precipitates with Frank’s dislocation loop clouds. Two intrinsic getter formation methods have been considered: one is related to oxygen impurity drain from the wafer surface region and the other implies accurate control of vacancy distribution over wafer thickness. We have analyzed the effect of getters as defect structures on the reduction of the mechanical stress required for dislocation generation onset which may eventually determine the mechanical strength of silicon wafers. The mechanism of impurity and defect gettering by gas phase medium with chlorine-containing compound additions has been considered. We show that silicon atom interaction with chlorine in the surface wafer region at high temperatures may cause the formation of vacancies which may penetrate to the specimen bulk with some probability. This leads to the case ∆Сv > 0 and ∆Ci ≤ 0, which changes the composition and density of the microdefects. Examples have been given for practical use of heat treatment of silicon wafers in a chlorine-containing atmosphere during oxide film application with the aim to dissolve microdefects, drain rapidly diffusing impurities from crystal bulk and prevent the formation of generation/recombination centers during device fabrication and silicon neutron doping.

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Section: Intrinsic Gettersmentioning

confidence: 99%

Getters in silicon

Харченко¹

2019

MoEM

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The getters in silicon

Харченко

2019

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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The processes of gettering of fast-diffusing metal impurities and structure defects in silicon, mainly used in the production of integrated circuits, power high-voltage devices, nuclear-doped silicon, are considered. The getters based on structural defects and gas-phase getters based on chlorine-containing compounds are analyzed. It is noted that for the formation of getters on the basis of structural defects, it is necessary to create internal sources for generation of dislocations and formation of precipitate — dislocation clusters. It is shown that dislocations are generated in the mouths of microfractures, which then form a sedentary dislocation grid on the non-working side of the plates. In the second case, defects are created in the area of the plate adjacent to the active layer of the electronic component. The process of creating an internal getter is based on the decomposition of a supersaturated solid oxygen solution in silicon, due to which a complex defect medium consisting of various precipitate-dislocation clusters is formed in the crystal. The packing defect as oxide precipitate with a cloud of Frank’s loops is formed. Two variants of creating an internal getter are considered — first is associated with the distillation of an oxygen impurity from the near-surface region of the plate, the second is associated with a fine adjustment of the distribution of vacancies along the plate thickness. The analysis of the influence of the getter as the defect structure reducing the magnitude of mechanical stress of the beginning of the generation of dislocations, which ultimately can determine the mechanical strength of the silicon wafer.This paper also considers the mechanism of gas-phase medium impurities and defects gettering with the addition of chlorine-containing compounds. It is shown that at elevated temperatures, due to the interaction of silicon atoms with chlorine in the near-surface region of the plate, it is possible to create vacancies that penetrate the sample volume with some probability. As a result, the case DСv > 0, DCi £ 0 is realized, that leads to a change in the composition of microdefects and their density. The examples of practical application of heat treatment in chlorine-containing atmosphere silicon wafer during application of the oxide film, in the case of the target the need for dissolution of the microdefects and of the withdrawal of fast diffusing impurities from the crystal volume, and to prevent the formation of generation-recombination centers in the manufacturing process of devices and in a nuclear doping silicon.

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Kinetics of Formation and Growth of Microdefects in Crystals

Cited by 2 publications

References 69 publications

Getters in silicon

Getters in silicon

The getters in silicon

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