Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon

Mikelsen, M.; Monakhov, Edouard; Alfieri, Giovanni; Avset, B. S.; Svensson, B. G.

doi:10.1103/physrevb.72.195207

Cited by 66 publications

(80 citation statements)

References 24 publications

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“…The existence of the four different charge states have been demonstrated by numerous experiments during the last 40 years, and DLTS measurements have established a (0/+)-donor level at $E V + 0.20 eV, a (À/0)-acceptor level at $E C À0.42 eV, and a (¼/À)-acceptor level at $E C À0.43 eV (Mikelsen et al, 2005). The divacancy can be formed either as a primary damage event or as a result of the interaction of two migrating vacancies.…”

Section: The Divacancymentioning

confidence: 96%

“…As discussed by Evwaraye and Sun (1976) dissociation can still be a competing or dominant process with diffusion in systems where there are relatively few sinks. The activation energy of diffusion of the divacancy in the neutral charge state has recently been determined by Mikelsen et al (2005) to be 1.30 AE 0.02 eV with a preexponential factor of 4.4 AE 1.9 Â 10 8 s À1 , and in CZ-silicon the loss of V 2 and the formation of V 2 O display a close one-to-one proportionality.…”

Section: The Divacancymentioning

confidence: 98%

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Electron and Proton Irradiation of Silicon

Larsen

Mesli

2015

Semiconductors and Semimetals

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Section: The Divacancymentioning

confidence: 96%

Section: The Divacancymentioning

confidence: 98%

Electron and Proton Irradiation of Silicon

Larsen

Mesli

2015

Semiconductors and Semimetals

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“…Hence, the weaker effect in the samples with 150 nm melt could be caused either by a lower total concentration of vacancy defects in the melted layer or by a peaked concentration profile located at the maximum melt depth, as predicted by the calculations. Based on the ϳ1% increase of the S parameter in the laser annealed samples, we estimate the vacancy defect concentration to be in the 10 16 cm −3 range in the melted layers, as predicted by the simulation.…”

Section: Discussionmentioning

confidence: 99%

“…5 for the divacancy related parameters suggested in Ref. 16 ͑D V 2 = ͑3 ϫ 10 −3 ͒exp͓−1.3 eV/ kT͔, E V 2 bind = 1.7 eV, and E V,V forw = 0.3 eV͒. The defects generated by the regrowth process evolve in the solid phase due to the fast varying high-temperature field induced by the irradiation.…”

Section: Vacancy-type Defect Evolution In a Multishot Laser Processmentioning

confidence: 99%

Vacancy generation in liquid phase epitaxy of Si

et al. 2007

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Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystallization show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments.

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“…The di-vacancy profiles, obtained by means of the simulation after each pulse, relative to the 1.0 J/cm2 and 1.2J/cm2 cases, are shown in fig. 4 for the di-vacancy related parameters suggested in Ref [16].…”

Section: Continuum Simulationmentioning

confidence: 99%

Defect Generation and Evolution in Laser Processing of Si

Magna

Mannino

Fortunato

et al. 2007

2007 15th International Conference on Advanced Thermal Processing of Semiconductors

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In this work concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and re-growth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy super-saturation after the laser process The dependence on the pulse energy and number of shots of the residual damage, after a multi shot laser irradiation process, is characterised by means of these measurements. Kinetic Monte Carlo simulations of the molten Si re-crystallization show trapping of vacancies in the re-crystallized region. The main outcome of this simulation is the dependence of the vacancy's generation efficiency on under-cooling. The knowledge of this dependence allows us to implement a continuum model (based on kinetics equations for the phase, the free defect and clustered defects) aimed to simulate the damage evolution during the pulse duration and in the time interval between two successive pulses. These continuum kinetic simulations of the full process show a defect evolution in close agreement with the experiments.

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Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon

Cited by 66 publications

References 24 publications

Electron and Proton Irradiation of Silicon

Electron and Proton Irradiation of Silicon

Vacancy generation in liquid phase epitaxy of Si

Defect Generation and Evolution in Laser Processing of Si

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