Kinetics of crystal growth of Sb2S3 in (GeS2)0.3(Sb2S3)0.7 glass

Málek, Jiřı́; Švadlák, Daniel; Mitsuhashi, T.; Haneda, Hajime

doi:10.1016/j.jnoncrysol.2006.02.048

Cited by 17 publications

(16 citation statements)

References 37 publications

(56 reference statements)

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“…Coming back to the proposed 2D surface nucleated growth model, it was found that the screw dislocation growth model describes the growth rate data better. Nevertheless, the 2D surface nucleated growth model is very often used for description of crystal growth in oxide , and chalcogenide , glasses, especially in the sulfur-analogue Ge–Sb–S system. ,− According to Figure , the calculated 2D surface nucleated growth model is close to the experimental data; therefore, analysis of the calculated parameters of this model in the presented Ge 2 Sb 2 Se 5 material could provide useful information, especially in comparison to that from other systems.…”

Section: Discussionmentioning

confidence: 56%

Crystal Growth Kinetics and Viscous Behavior in Ge₂Sb₂Se₅ Undercooled Melt

et al. 2016

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Crystal growth, viscosity, and melting were studied in Ge2Sb2Se5 bulk samples. The crystals formed a compact layer on the surface of the sample and then continued to grow from the surface to the central part of the sample. The formed crystalline layer grew linearly with time, which suggests that the crystal growth is controlled by liquid-crystal interface kinetics. Combining the growth data with the measured viscosities and melting data, crystal growth could be described on the basis of standard crystal growth models. The screw dislocation growth model seems to be operative in describing the temperature dependence of the crystal growth rate in the studied material in a wide temperature range. A detailed discussion on the relation between the kinetic coefficient of crystal growth and viscosity (ukin ∝ η(-ξ)) is presented. The activation energy of crystal growth was found to be higher than the activation energy of crystallization obtained from differential scanning calorimetry, which covers the whole nucleation-growth process. This difference is considered and explained under the experimental conditions.

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Section: Discussionmentioning

confidence: 56%

Crystal Growth Kinetics and Viscous Behavior in Ge₂Sb₂Se₅ Undercooled Melt

et al. 2016

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“…The crystallization kinetics of antimony trisulfide in (GeS 2 ) x (Sb 2 S 3 ) 1 À x glasses (x = 0.2 and 0.3) has been reported recently [7,8]. These studies combine standard analysis of DSC data of overall crystallization process, the microscopic study of the crystal growth kinetics and viscosity behavior of undercooled melts of the pseudobinary system of GeS 2 -Sb 2 S 3 composition.…”

Section: Introductionmentioning

confidence: 96%

Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass

Švadlák

Zmrhalová

Pustková

et al. 2008

Journal of Non-Crystalline Solids

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“…The stability of the glass during heating to the temperature above T g depends on the temperature of crystallization. The temperature range between T g and the beginning of the first crystallization (crystallization of Sb 2 S 3 ) measured by DSC at heating rate 20 K/min is 80°C for (GeS 2 ) 0.2 (Sb 2 S 3 ) 0.8 composition and 120°C for (GeS 2 ) 0.3 (Sb 2 S 3 ) 0.7 composition (the samples were in the form of bulk) [46,47]. So, compared to amorphous Se (a "model" system for chalcogenides with well-described enthalpy and volume relaxation and crystallization [14,[48][49][50]) where difference between T g and crystallization is only ca.…”

Section: Resultsmentioning

confidence: 99%