Kinetics of C4 bump degradation in overly aggressive HTOL

As technology continues to scale, there will be increasing demands on I/O counts and power requirements, leading to decreasing solder pitch and increasing current density for solder bumps in high-density flip-chip packages. At the same time, increasing performance requirements has led to the use of organic packages instead of the conventional ceramic packages. Hence it is very important to be able to measure the current carrying capability of solder bumps and evaluate the impact of reduced bump pitch and use of organic packages on EM reliability. In this paper, we run conventional EM test configuration using mechanically shorted dies and making the connection to the solder bumps through the flipchip package directly mounted on the test boards to evaluate the effect of varying bump pitches on the electromigration performance of the solder bumps. Our results show that electromigration resistance is very high on ceramic packages with high lead solders and degrades significantly when high lead solder is used in conjunction with eutectic solder on organic packages.

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“…This transformation is accelerated beyond 140 deg. C. [3]. The stress caused by this volume change leads to mechanical damage to the PLM.…”

Section: Discussionmentioning

confidence: 96%

Electromigration of C4 Bumps in Ceramic and Organic Flip-Chip Packages

Master

Marathe

Pham

et al.

56th Electronic Components and Technology Conference 2006

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Electromigration Test on Void Formation and Failure Mechanism of FCBGA Lead-Free Solder Joints

Jen

Liu

Lai

2009

IEEE Trans. Comp. Packag. Technol.

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Flip-Chip Ball Grid Array Lead-Free Solder Joint Under Reliability Test

Jen

Liu

2005

Journal of Electronic Packaging

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The work is aimed to investigate the mechanical responses of bare dies of the combination of pure tin∕Al–NiV–Cu Under bump metallization (UBM) and packages of pure tin∕Al–NiV–Cu UBM/substrate of standard thickness of aurum. The mechanical properties under multiple reflow and long term high temperature storage test (HTST) tests at different temperatures and the operational life were obtained. A scanning electron microscope was used to observe the growth of IMC and the failure modes in order to realize their reaction and connection. From the empirical results of bare dies, the delamination between IMC and die was observed due to the tests at 260 °C multiple reflow. However, their mechanical properties were not affected. Nevertheless, the bump shear strength of bare dies were decreased by HTST tests. In package, all the results of mechanical properties by multiple reflow test and HTST test were significantly lowered. It was shown that the adhesion between bump and die reduced obviously as tests going on. As for high temperature operational life test in the conditions of 150 °C and 320 mA (5040A∕cm2), the average stable service time of the package was 892 h, and the average ultimate service time of the package was 1053 h.

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Kinetics of C4 bump degradation in overly aggressive HTOL

Cited by 3 publications

References 4 publications

Electromigration of C4 Bumps in Ceramic and Organic Flip-Chip Packages

Electromigration of C4 Bumps in Ceramic and Organic Flip-Chip Packages

Electromigration Test on Void Formation and Failure Mechanism of FCBGA Lead-Free Solder Joints

Flip-Chip Ball Grid Array Lead-Free Solder Joint Under Reliability Test

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