Kinetics of accumulation of vacancy complexes in dislocated silicon under⁶⁰Co γ-ray irradiation

The effect of grown-in structural imperfections on the radiation defect formation and annealing in dislocation-free silicon

“…to 180"C, while in crystals with A + B-type microdefects the annealing temperature of recombination centres is shifted towards lower temperatures by 30 to 40 K. Besides, sometimes one observes an additional defect formation in the temperature range from 300 to 350 "C which anneales with temperature increasing up to 400 "C. (1) x,, = 127, (2) 117, (3) 111, (4) 100 "C. Tan, f°C) -…”

“…The efficiency of radiation defect (RD) introduction by the diffusive mechanism of complex formation, which is realized when Si is irradiated by y-rays or electrons with energy not exceeding 10 MeV, is determined [l to 31 by the concentration ratio of interactingcomponents (impurity atoms, primary RD), their charge states and depends on the grown-in structural imperfections present in the bulk of the crystal and producing strain fields. Affected by these fields irradiation-generated vacancies and interstitial atoms migrate directedly towards imperfections where they annihilate or participate in complex formation [4,51. This paper studies the effect of grown-in structural imperfections and the strain fields produced by them on the processes of R D formation and annealing.…”