Kinetics and products of interaction of zinc-containing gallium pastes–solders

Михеев, А. А.; Temnykh, V. I.; Kazakov, Vladimir S.; Temnykh, Evgeni V.; Mityaev, A. E.; Зеер, Г. М.; Abkaryan, A. K.

doi:10.1080/09507116.2012.715899

Cited by 8 publications

(2 citation statements)

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“…The feasibility of using Ga or Ga-based alloy to bond Cu substrates at a temperature range of 150–300 °C has been demonstrated in previous work. − θ-CuGa 2 and γ 3 -Cu 9 Ga 4 phase formed between liquid Ga and Cu substrate below 200 °C. ,, γ 1 -Cu 9 Ga 4 phase and γ 2 -Cu 9 Ga 4 could also form when reaction time or temperature increased. ,, It is observed that nonuniform reactions lead to liquid metal embrittlement . The brittle interfacial IMCs at the interface could be also harmful to joint strength and reliability .…”

Section: Introductionmentioning

confidence: 92%

Interfacial Reactions between Ga and Cu-10Ni Substrate at Low Temperature

Liu

Zeng

Yang

et al. 2020

ACS Appl. Mater. Interfaces

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Ga alloys have been attracting significant renewed attention for lowtemperature bonding applications in electronic packaging. This study systematically investigates the interfacial reaction between liquid Ga and Cu-10Ni substrates at 30 °C. In addition to CuGa 2 formed from binary Ga/Cu couples, a layer of nanocrystalline Ga 5 Ni and CuGa 2 formed between the Cu-10Ni substrate and the blocklike micrometer scale CuGa 2 layer. The growth of interfacial intermetallics (IMCs) on the Cu-10Ni substrate was substantially accelerated compared to the IMC growth in binary Ga/Cu couples. Reaction kinetics study shows the IMC growth from the Cu-10Ni substrate was controlled by reaction and volume diffusion, while the IMC growth from the Cu substrate was controlled by volume diffusion. It is also found that the presence of Ni within the CuGa 2 phase resulted in improved thermal stability and a smaller coefficient of thermal expansion during heating from 25 to 300 °C, using synchrotron XRD analysis. There was least thermal expansion anisotropy among most of the IMCs that form in conventional Sn-based solder alloys, including Cu 6 Sn 5 and so forth. It is concluded that using a Cu-10Ni substrate as opposed to a Cu substrate could achieve sufficient metallurgical bonding within shorter processing time. The results have implications for broadening the application temperatures when using Ga as a low-temperature joining material.

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Section: Introductionmentioning

confidence: 92%

Interfacial Reactions between Ga and Cu-10Ni Substrate at Low Temperature

Liu

Zeng

Yang

et al. 2020

ACS Appl. Mater. Interfaces

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“…As well as the Sn-Bi-Ga alloy, a eutectic Ga-Zn (Ga-10 wt % Zn, melting point 24.7 °C) solder paste has been proposed, and the interactions with single-phase brasses at 150 and 200 °C have been investigated during the soldering process [ 63 ]. This Zn-containing Ga alloy has advantages in both the manufacturing process and joint quality, and is regarded as a promising material for low-temperature diffusion soldering of materials used in microelectronics.…”

Section: Ga and Ga-based Alloys Applications In Microelectronic Inmentioning

confidence: 99%

Ga-Based Alloys in Microelectronic Interconnects: A Review

et al. 2018

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Gallium (Ga) and some of its alloys have a range of properties that make them an attractive option for microelectronic interconnects, including low melting point, non-toxicity, and the ability to wet without fluxing most materials—including oxides—found in microelectronics. Some of these properties result from their ability to form stable high melting temperature solid solutions and intermetallic compounds with other metals, such as copper, nickel, and aluminium. Ga and Ga-based alloys have already received significant attention in the scientific literature given their potential for use in the liquid state. Their potential for enabling the miniaturisation and deformability of microelectronic devices has also been demonstrated. The low process temperatures, made possible by their low melting points, produce significant energy savings. However, there are still some issues that need to be addressed before their potential can be fully realised. Characterising Ga and Ga-based alloys, and their reactions with materials commonly used in the microelectronic industry, are thus a priority for the electronics industry. This review provides a summary of research related to the applications and characterisation of Ga-based alloys. If the potential of Ga-based alloys for low temperature bonding in microelectronics manufacturing is to be realised, more work needs to be done on their interactions with the wide range of substrate materials now being used in electronic circuitry.

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