1998
DOI: 10.1021/jp9812987
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Kinetics and Mechanism of the Heterogeneous Decomposition of Nitric Oxide on Metal Oxides in the Presence of Hydrocarbons

Abstract: Rates and products of the (3 + α)NO + CH4 ⇒ 1/2(3 + α)N2 + (1 − α)CO + αCO2 + 2H2O (0 ≤ α ≤ 1) reaction were determined in low-pressure (NO/CH4/O2) mixtures ([NO] < 1 μM, [CH4] < 10[NO], [O2] ≤ [NO]; 1 μM = 82 ppm at 1 atm, 1000 K) flowing over Sm2O3 between 1000 and 1200 K. Samaria pretreated with CH4 (or H2) at reaction temperatures instantly releases N2 when exposed to NO. Prompt CO formation also occurs on methane-conditioned samples. In contrast, stationary outflow gas compositions attain only after sever… Show more

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“…In this process, Sm 2 O 3 has been used for 180 h, at an operating temperature of 700°C [2][3][4]. Other catalytic properties of this oxide have also been investigated [5][6][7]. Moreover, its high permittivity ( r = 10) and band gap M a n u s c r i p t 3 (E g = 4.33 eV) are suitable for metal-oxide-semiconductor (MOS) devices, and resistance random access memories (RRAMs) [8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…In this process, Sm 2 O 3 has been used for 180 h, at an operating temperature of 700°C [2][3][4]. Other catalytic properties of this oxide have also been investigated [5][6][7]. Moreover, its high permittivity ( r = 10) and band gap M a n u s c r i p t 3 (E g = 4.33 eV) are suitable for metal-oxide-semiconductor (MOS) devices, and resistance random access memories (RRAMs) [8][9][10].…”
Section: Introductionmentioning
confidence: 99%