“…In this process, Sm 2 O 3 has been used for 180 h, at an operating temperature of 700°C [2][3][4]. Other catalytic properties of this oxide have also been investigated [5][6][7]. Moreover, its high permittivity ( r = 10) and band gap M a n u s c r i p t 3 (E g = 4.33 eV) are suitable for metal-oxide-semiconductor (MOS) devices, and resistance random access memories (RRAMs) [8][9][10].…”