Kinetically Driven Growth Instability in Stressed Solids

Barvosa-Carter, William; Aziz, Michael J.; Gray, L. J.; Kaplan, T. A.

doi:10.1103/physrevlett.81.1445

Cited by 84 publications

(81 citation statements)

References 24 publications

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“…The As effect may have overwhelmed the expected enhancement from tension. However, this explanation contradicts previous results 7 suggesting independent stress and dopant effects on SPE rate. In addition, it is unlikely that the presence of As is influencing volume changes between ␣-Si and Si as previously proposed 5,6 due to the similarity in size between As and Si atoms and the As concentrations used.…”

contrasting

confidence: 56%

“…2 and suggests that the regrowth observed in this study was significantly slower than expected. One possible explanation for the differences between the observed effect of tension in the present and previous studies [5][6][7] is the presence of As, known to enhance 14 SPE rates. The As effect may have overwhelmed the expected enhancement from tension.…”

contrasting

confidence: 55%

“…From these studies, a model was developed, proposing exponential dependence of SPE rate with in-plane stress characterized by an activation volume of ͑0.15± 0.01͒ ⍀, where ⍀ is the atomic volume of Si. In order to compare the presented results with previous observations, the proposed model [5][6][7] was used to estimate the regrowth as a function of time. This is also shown in Fig.…”

mentioning

confidence: 99%

“…[4][5][6] In-plane compression also caused significant roughening of the regrowing ␣/crystalline interface. 7 This is significant since interfacial roughening is known to cause SPE-related defect formation. 8,9 However, while BarvosaCarter et al 7 quantified and modeled the roughness of the regrowing interface, they did not quantify the resulting defects or examine tensile stresses.…”

mentioning

confidence: 99%

“…7 This is significant since interfacial roughening is known to cause SPE-related defect formation. 8,9 However, while BarvosaCarter et al 7 quantified and modeled the roughness of the regrowing interface, they did not quantify the resulting defects or examine tensile stresses. Furthermore, the stresses used were fairly small in magnitude ͑Ͻ0.5 GPa͒ and the stresses present in Si-based technology can be ϳ1 GPa or more.…”

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confidence: 99%

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Solid phase epitaxy in uniaxially stressed (001) Si

Rudawski

Jones

Gwilliam

2007

Applied Physics Letters

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The effect of ͓110͔ uniaxial stresses up to 1.5 GPa on defect nucleation during solid phase epitaxy of amorphous ͑001͒ Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both compression and tension resulted in an increase in regrowth defects compared to the stress-free case. The defects in compression appear to arise from roughening of the crystallizing interface whereas in tension it is proposed that reorientation of crystallites near the initial amorphous/ crystalline interface is responsible for defect formation. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2801518͔ Solid phase epitaxy ͑SPE͒ in amorphous ͑␣͒ Si created via ion implantation produces enhanced dopant activation and shallower junctions. 1 However, stresses found during typical device fabrication may influence the SPE process. 2,3 Early investigations revealed exponential enhancement of the ͓001͔ SPE using hydrostatic pressure while subsequent investigations revealed uniaxial stress in the plane of the regrowing ␣/crystalline interface caused smaller changes to SPE rates. [4][5][6] In-plane compression also caused significant roughening of the regrowing ␣/crystalline interface. 7 This is significant since interfacial roughening is known to cause SPE-related defect formation. 8,9 However, while BarvosaCarter et al. 7 quantified and modeled the roughness of the regrowing interface, they did not quantify the resulting defects or examine tensile stresses. Furthermore, the stresses used were fairly small in magnitude ͑Ͻ0.5 GPa͒ and the stresses present in Si-based technology can be ϳ1 GPa or more. 2 Thus, the goal of this study is to examine the effect of very high uniaxial ͓110͔ stresses on SPE in ͑001͒ Si.For this study, 50-m-thick polished ͑001͒ Si wafers were used. The specimens were first Si + implanted at 50 and 200 keV with doses of 1.0ϫ 10 15 cm −2 and subsequently As + implanted at 300 keV to a dose of 1.8ϫ 10 15 cm −2 . Samples were cleaved along ͗110͘ directions into ϳ0.3ϫ 1.8 cm 2 strips. Stress was applied by bending and inserting the strips into slots in a quartz tray spaced ϳ1.5 cm apart. A Philtec laser displacement measurement system accurate to 1 m measured the local radius of curvature along the strips. The bent strips were symmetric and parabolic in shape with the smallest radius of curvature at midlength. The ͓110͔ stress ͑ ͓110͔ ͒ was calculated using the ͓110͔ Young's modulus of Si near ϳ500°C ͑ϳ1.61ϫ 10 11 Pa͒, the wafer halfthickness, and the local radius of curvature as presented elsewhere. 10,11 Maximum repeatable stresses of 1.5± 0.1 GPa were attained. Specimens were annealed at 525°C in N 2 ambient for 0.7-3.2 h. Stress-free, tensile, and compressive specimens were annealed simultaneously for each anneal time. Upon removal from the quartz tray after annealing, the specimens exhibited no detectable radii of curvature ͑ӷ2.0 m͒ indicating no measurable plastic strain. Regrowth of the ␣-Si layers was ex...

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confidence: 56%

contrasting

confidence: 55%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Solid phase epitaxy in uniaxially stressed (001) Si

Rudawski

Jones

Gwilliam

2007

Applied Physics Letters

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Wear and Corrosion Damage of Medical‐Grade Metals and Alloys

Ryu

Shrotriya

2013

Wear of Advanced Materials

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Chemo‐mechanical coupling model of solid oxide fuel cell under high‐temperature oxidation

2020

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Summary Solid oxide fuel cell (SOFC), which is a generation device that converts chemical energy into electrical energy, has been regarded as a new generation device. The diffusion mechanism of metal cations and anions during the high‐temperature oxidation process of SOFC is proposed. Based on the equilibrium expression and diffusion equation, the chemo‐mechanical coupling relationship between oxide stress and thickness growth of the oxide layer is established by considering the influences of viscoplastic effect and oxide growth effect. The present theoretical result is consistent with the previous experimental results. In addition, the stress critical points corresponding to different parameters are different in initial oxidation stage. The oxide stress varies dramatically with time in the compressive stress phase, but it changes slowly in the tensile stress phase. The compressive stress that exists in the oxide layer increases with the growth coefficient (DNiO = 1000‐15 000 m−1) of the oxide layer. The oxide stresses in oxide layer and electrolyte reduce with viscoplastic coefficient of the oxide layer from JNiO = 8.97 × 10−5 Pa−1 s−1 to JNiO = 16.97 × 10−5 Pa−1 s−1 and anode‐oxide layer thicknesses from H = 30 μm to H = 660 μm, while they increase with viscoplastic coefficient of the anode from JNi = 3.81 × 10−5 Pa−1 s−1 to JNi = 12.81 × 10−5 Pa−1 s−1 and kinetic parabolic constant from k p = 2.9 × 10−15 m2s−1 to k p = 12.9 × 10−15 m2s−1 in whole oxidation stage. The oxide thickness increases with kinetic parabolic constant in the whole oxidation stage and this changing trend accords with parabolic diffusion law. The oxide thickness increases with temperatures increasing. The results obtained from this study will provide the reference to the researches of the chemo‐mechanical coupling model and performance optimization of SOFC under high‐temperature oxidation.

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Kinetically Driven Growth Instability in Stressed Solids

Cited by 84 publications

References 24 publications

Solid phase epitaxy in uniaxially stressed (001) Si

Solid phase epitaxy in uniaxially stressed (001) Si

Wear and Corrosion Damage of Medical‐Grade Metals and Alloys

Chemo‐mechanical coupling model of solid oxide fuel cell under high‐temperature oxidation

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