Kinetic Process of Polarity Selection in GaN Growth by RF-MBE

Xu, Ke; Yano, N.; Jia, A.W.; Yoshikawa, Akihiko; Takahashi, Kiyoshi

doi:10.1002/1521-3951(200111)228:2<523::aid-pssb523>3.0.co;2-u

Cited by 20 publications

(13 citation statements)

References 7 publications

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“…The results are also consistent with studies showing polarity inversion induced by a variety of impurities and dopants, including Si (for GaN on Si and AlN), Mg (for GaN on GaN, SiC, Al 2 O 3 ), O (for AlN on AlN), O (for GaN on GaN), Al x O y (for GaN on GaN), Al (for GaN on Al 2 O 3 ), and Ti (for GaN on Al 2 O 3 ) …”

Section: Resultssupporting

confidence: 90%

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon

Roshko

Brubaker

Blanchard

et al. 2019

Physica Status Solidi (b)

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The crystallographic polarity of AlN grown on Si(111) by plasma‐assisted molecular beam epitaxy is intentionally inverted from N‐polar to Al‐polar at a planar boundary. The position of the inversion boundary is controlled by a two‐step growth process that abruptly changes from Al‐rich to N‐rich growth conditions. The polarity inversion is induced by the presence of Si, which is incorporated from an Al–Si eutectic layer that forms during the initial stages of AlN growth and floats on the AlN surface under Al‐rich growth conditions. When the growth conditions change to N‐rich, the Al and Si in the eutectic react with the additional N‐flux and are incorporated into the solid AlN film. Relatively low levels of Al–Si eutectic formation combined with lateral variations in the Si incorporation lead to nonuniformity in the polarity inversion and formation of surprisingly narrow, vertical inversion domains. The results suggest that intentional incorporation of uniform layers of Si may provide a method for producing polarity engineered nitride structures.

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Section: Resultssupporting

confidence: 90%

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon

Roshko

Brubaker

Blanchard

et al. 2019

Physica Status Solidi (b)

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“…On the other hand, polarity conversion has been demonstrated by depositing an Al metallic layer on top of one N-polar GaN layer. The overgrown GaN layer deposited on top of this Al-saturated surface was shown to exhibit a Ga-polarity [23]. A similar result has been obtained by M. Adachi and coworkers on AlN layers grown by liquid phase epitaxy.…”

supporting

confidence: 83%

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Concordel

Jacopin

Gayral

et al. 2019

Applied Physics Letters

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…In this case, N polarity is kinetically unfavorable on the Al contained surface. 14 39 Therefore, we could conclude that the 2 nd GaN has mixed polarity with Ga-and N-polar GaN, where the N polarity was usually enhanced around grain boundaries.…”

Section: Polarity Study From Chemical Etchingmentioning

confidence: 90%

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

et al. 2015

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To integrate multiple functional devices on a chip, advances in epitaxial growth on heterosubstances are required. As one approach to achieve an epitaxial layer on an amorphous substrate, we developed a method of combined epitaxial growth using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). This two-stage combined growth can be used to grow a binary gallium nitride (GaN) on any thermally durable substances. The first MBE growth step provided us effective nucleation with uniform morphology. Meanwhile, the second MOCVD growth enabled improved crystalline quality. Detailed analysis at grain-to-grain and layer-to-layer interfaces was studied with high-resolution transmission electron microscopy (TEM) characterization. This study gives a deep understanding of the growth behavior, thereby supporting the demonstration of perfect single crystalline GaN, enabling the realization of optoelectronic GaN-based devices on amorphous layer.

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Kinetic Process of Polarity Selection in GaN Growth by RF-MBE

Cited by 20 publications

References 7 publications

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon

Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

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