Kinetic phase diagram for terrace and step nucleation of CaF/Si(111)

Wollschläger, J.; Bierkandt, Markus; Larsson, Mats

doi:10.1016/s0169-4332(03)00639-1

Cited by 8 publications

(4 citation statements)

References 35 publications

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“…Here, the interface layer etched the adatom, first, and second silicon layer relative to the top terrace, similar to the finding of type-II "islands" in pits on bare terraces. A kinetic phase diagram for the CaF 1 nucleation [72] identifies the conditions herein to support terrace nucleation over step nucleation, in agreement with the data presented in Fig. 3(a).…”

Section: Discussionsupporting

confidence: 86%

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Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

et al. 2018

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We investigate the CaF 1 /Si(111) interface using a combination of high-resolution scanning tunneling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF 1 films grown at substrate temperatures between 550 and 600 • C on Si (111) surfaces reveal the existence of two island types that are distinguished by their edge topology, nucleation position, measured height, and inner defect structure. Our data suggest a growth model where the two island types are the result of two reaction pathways during CaF 1 interface formation. A key difference between these two pathways is identified to arise from the excess species during the growth process, which can be either fluorine or silicon. Structural details as a result of this difference are identified by means of high-resolution noncontact atomic force microscopy and add insights into the growth mode of this heteroepitaxial insulator-on-semiconductor system.

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Section: Discussionsupporting

confidence: 86%

“…3(c); see also line profiles below the STM images]. Although mixed terrace (type-I islands) and step (partly type-II islands) nucleation has been related before to the substrate temperature during growth as well as the terrace width [72,73], subtle differences regarding the structures of these two islands become evident from our data.…”

Section: Resultsmentioning

confidence: 63%

Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

et al. 2018

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“…To quantify the flatness of the CaF 2 film surface, the arithmetical average roughness (R a ) and root mean square The lack of surface quality for CaF 2 films around 600 • C has already been reported in the literature (see, for instance, [2]). Since the initial stage of growth is determinant to the quality of the CaF 2 film surface (see the evolution of the RHEED patterns shown in figures 2 and 3), the behaviour of the CaF 2 film surface roughness as a function of growth temperature, observed in the RHEED and AFM analysis described here, may be related to the temperature transition from terrace to step nucleation during the growth of CaF 2 films on Si vicinal substrates [28]. Another possible explanation can be the transition from a (1 × 1) to a (3 × 1) reconstruction observed for temperatures higher than 500 • C, which involves the dissociation of the CaF 2 molecules to a CaF stoichiometry on the (1 1 1) Si-(7 × 7) reconstructed surface at the beginning of growth [29].…”

Section: Atomic Force Microscopymentioning

confidence: 85%

Investigation of the surface properties of CaF₂ layers on (1 1 1) Si as a function of growth temperature

Suela¹,

Abramof²,

Rappl³

et al. 2011

J. Phys. D: Appl. Phys.

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This work reports on the study of surface properties of CaF 2 films (30 and 10 nm thick) grown on (1 1 1) Si by molecular beam epitaxy at substrate temperatures from 400 to 700 • C. Reflection high-energy electron diffraction (RHEED) analysis indicated that CaF 2 films with smooth surfaces were obtained in temperature ranges 500-550 • C and 620-700 • C, while at temperatures from 400 to 500 • C and in the vicinity of 600 • C the films showed grains randomly oriented on top of the surface. Atomic force microscopy (AFM) investigation corroborated with the RHEED results and confirmed the presence of grains on the film surface, with an evident transition near 600 • C. The dependence of grain density on the growth temperature followed the expectation from the RHEED analysis. The arithmetical average roughness of the CaF 2 surface obtained from the AFM images remained below 1 nm for the best quality films. The x-ray reflectivity curves of all samples exhibited well-defined interference fringes, whose oscillation damping behaviour agreed with the RHEED and AFM results. The CaF 2 layer thickness and roughness were accurately determined by a best-fit procedure applied to the x-ray reflectivity data. By combining all results, the temperature range between 525 and 550 • C was found to be the most suitable to grow CaF 2 layers on (1 1 1) Si. For growth temperatures above 650 • C, pinholes and cracks started to reduce the CaF 2 surface quality.

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“…2d). Compared with the SL coating, the microstructure of the PA EB-PVD coating changed due to the enhanced adatom mobility induced by plasma activation and substrate bias [30,31]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Oxidation and diffusion barrier behaviors of double-layer NiCoCrAlY coatings produced by plasma activated EB-PVD

Peng

Guo

et al. 2011

Surface and Coatings Technology

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Kinetic phase diagram for terrace and step nucleation of CaF/Si(111)

Cited by 8 publications

References 35 publications

Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

Investigation of the surface properties of CaF₂ layers on (1 1 1) Si as a function of growth temperature

Oxidation and diffusion barrier behaviors of double-layer NiCoCrAlY coatings produced by plasma activated EB-PVD

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Kinetic phase diagram for terrace and step nucleation of CaF/Si(111)

Cited by 8 publications

References 35 publications

Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data

Investigation of the surface properties of CaF2 layers on (1 1 1) Si as a function of growth temperature

Oxidation and diffusion barrier behaviors of double-layer NiCoCrAlY coatings produced by plasma activated EB-PVD

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Investigation of the surface properties of CaF₂ layers on (1 1 1) Si as a function of growth temperature