Kinetic Monte Carlo–molecular dynamics investigations of hyperthermal copper deposition on Cu(111)

Pomeroy, Joshua M.; Jacobsen, Joachim; Hill, C. C.; Cooper, B. H.; Sethna, James P.

doi:10.1103/physrevb.66.235412

Cited by 80 publications

(46 citation statements)

References 28 publications

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“…The most efficient tool to simulate the evolution of the adisland morphology is the Kinetic Monte-Carlo (KMC [23,24,25]) method which needs as input the various rates of all the elementary atomic processes. Two types of processes are essential in this respect: the diffusion along steps (and its anisotropy between step A and step B), and the corner crossings to go from one edge to another.…”

Section: Introductionmentioning

confidence: 99%

Diffusion rates of Cu adatoms on Cu(111) in the presence of an adisland nucleated at fcc or hcp sites

et al. 2005

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The surface diffusion of Cu adatoms in the presence of an adisland at FCC or HCP sites on Cu(111) is studied using the EAM potential derived by Mishin et al. [Phys. Rev. B 63 224106 (2001)]. The diffusion rates along straight (with close-packed edges) steps with (100) and (111)-type microfacets (resp. step A and step B) are first investigated using the transition state theory in the harmonic approximation. It is found that the classical limit beyond which the diffusion rates follow

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Section: Introductionmentioning

confidence: 99%

Diffusion rates of Cu adatoms on Cu(111) in the presence of an adisland nucleated at fcc or hcp sites

et al. 2005

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“…Various atomistic processes such as ion enhanced mobilities, cluster dissociation [1], and defect creation [2,4] have been suggested to explain this. However, in particular, in LEID it is a remarkable fact that the growth properties do not seem to depend much on the details of ion bombardment.…”

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confidence: 99%

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Koponen

Jahma²,

Rusanen³

et al. 2004

Phys. Rev. Lett.

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We present a rate equation model for submonolayer island growth under conditions where hyperthermal deposition techniques such as low-energy ion deposition are employed to achieve smooth layerby-layer growth. By asymptotic analysis, we demonstrate that the model exhibits stationary behavior with well-defined dynamic and growth exponents and , respectively, in the limit of small and high detachment rates. We verify these predictions by using the particle coalescence simulation method. The simulations reveal the existence of a relatively sharp transition regime with an increasing detachment rate of adatoms from high values of the growth exponent 1 to much smaller values of determined by detachment and island diffusion processes. Our numerical results for the island size distribution indicate an anomalously high number of small islands, in agreement with available experimental data.

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“…In HTD the reversibility of growth is manifested through enhanced adatom detachment from islands [1,4]. Detachment and island mobility allow us to neglect spatial correlations between islands [20,21,22,23], which justifies the rate equation description of the problem.…”

Section: Modelmentioning

confidence: 99%

“…In LEID this form for the detachment rate is physically a well justified choice, because in the regime of bombarding energies from 10 eV to 100 eV adatom detachment dominates and island breakup into larger pieces is not expected to occur [4,25]. Moreover, since every deposition event at the vicinity of an island boundary can be assumed to detach adatoms at least with a probability proportional to the island perimeter (i.e.…”

Section: Modelmentioning

confidence: 99%

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Diffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)

et al. 2005

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We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To this end, we incorporate realistic size and temperature-dependent island diffusion coefficients for the case of homoepitaxial growth on Cu(100) and Cu(111) surfaces. We demonstrate that the generic features of growth remain unaffected by the details of island diffusion, thus validating the generic scenario of high density of small islands found experimentally and theoretically for large detachment rates. However, the details of the morphological transition and scaling of the mean island size are Preprint submitted to Surface Science 7 March 2018 strongly influenced by the size dependence of island diffusion. This is reflected in the scaling exponent of the mean island size, which depends on both temperature and the surface geometry.

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Kinetic Monte Carlo–molecular dynamics investigations of hyperthermal copper deposition on Cu(111)

Cited by 80 publications

References 28 publications

Diffusion rates of Cu adatoms on Cu(111) in the presence of an adisland nucleated at fcc or hcp sites

Diffusion rates of Cu adatoms on Cu(111) in the presence of an adisland nucleated at fcc or hcp sites

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Diffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)

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